Publications

• Article dans une revue

TEM study of PtSi contacts layers for low Schottky barrier MOSFETs

A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, Emmanuel Dubois

We report investigations of the silicide formation process in the Pt/Si structure of low Schottky barrier MOSFETs on SOI. The silicide layers are used there as source and drain contacts and the high quality of the silicide/Si interface and the silicide structure are essential for the electrical…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.274-277. ⟨10.1016/j.nimb.2006.10.033⟩. ⟨hal-00138656⟩

• Communication dans un congrès

New receiver architecture for localisation system

V.Y. Vu, A. Benlarbi-Delaï

International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2006, 2006, Japan. pp.879-882, ⟨10.1109/ISPACS.2006.364782⟩. ⟨hal-00241357⟩

• Communication dans un congrès

Ultra wide band dielectric spectroscopy of single cell in microfluidic devices

Vincent Senez, A. Treizebre, Erwan Lennon, Hind Ghandour, Vianney Mille, Thomas Heim, Tahsin Akalin, Takahisa Yamamoto, Nour Eddine Bourzgui, Dominique Legrand, Yasuyuki Sakai, Philippe Supiot, Joël Mazurier, Teruo Fujii, Bertrand Bocquet

10th International Conference on Miniaturized Systems for Chemistry and Life Sciences (uTAS2006), Nov 2006, Tokyo, Japan. pp.738-740. ⟨hal-00130877⟩

• Article dans une revue

Interfaces between gamma-Al2O3 and silicon

Pierre Boulenc, Isabelle Devos

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer between the high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þ reconstructed surface. According to experimental data and…

Materials Science in Semiconductor Processing, 2006, 9 (6), pp.949-953. ⟨10.1016/j.mssp.2006.10.043⟩. ⟨hal-00152970⟩

• Communication dans un congrès

UWB-IR transceiver for millimeter wave WLAN

N. Deparis, A. Boé, Christophe Loyez, N. Rolland, P.A. Rolland

2006, pp.4785-4789. ⟨hal-00152957⟩

• Article dans une revue

Evolution of an 1 MHz ultrasonic cavitation bubble field in a chopped irradiation mode

S. Labouret, J. Frohly, Frédéric Rivart

Ultrasonics Sonochemistry, 2006, 13, pp.287-294. ⟨hal-00140417⟩

• Communication dans un congrès

Simulation d'une cavité 2D par l'assemblage de résonateurs RLC

S. Bazzoli, S. Baranowski, M. Cauterman, B. Demoulin

2006, pp.144-145. ⟨hal-00142610⟩

• Communication dans un congrès

Analyse de la propagation des ondes dans des chaînes de billes

Anne-Christine Hladky, M. de Billy

Journées ‘Etude de la propagation ultrasonore en milieux non homogènes en vue du contrôle non destructif' du GDR US 2501, 2006, France. pp.34-38. ⟨hal-00369949⟩

• Communication dans un congrès

Development and characterization of piezofiber based 1-3 ultrasonic composites

A.J. Schonecker, T. Rödig, Anne-Christine Hladky, T. Daue

2006 US Navy Workshop on Acoustic Transduction Materials and Devices, 2006, State College, PA, United States. ⟨hal-00369955⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (…

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩