Publications

• Article dans une revue

Thick LiNnO3 layers on diamond-coated silicon for surface acoustic wave filters

El Hadj Dogheche, Véronique Sadaune, X. Lansiaux, Denis Remiens, Tadeusz Gryba

Applied Physics Letters, 2002, 81, pp.1329-1331. ⟨hal-00149631⟩

• Communication dans un congrès

Microwave photonic devices

Didier Decoster, V. Magnin, Jean-Pierre Vilcot, Joseph Harari

1st France-Singapore Workshop on Microwave Optoelectronics Technology, 2002, Singapore, Singapore. ⟨hal-00149650⟩

• Communication dans un congrès

Reliability of GaN based devices

G. Meneghesso, Christophe Gaquière, E. Zanoni

Proceedings of the 2002 European Microwave Week, 2002, Milano, Italy. ⟨hal-00149728⟩

• Communication dans un congrès

Large signal behaviour of gallium nitride based HEMT's devices

Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard

25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chermogolovska, Russia. ⟨hal-00149730⟩

• Autre publication scientifique

Amélioration de la parole et détection d'activité vocale dans les systèmes de télécommunications mobiles

Bendjima Brahim

2002. ⟨hal-00149732⟩

• Article dans une revue

Univariant assessment of the quality of images

M. Jung, D. Leger, Marc G. Gazalet

Journal of Electronic Imaging, 2002, 11, pp.354-364. ⟨hal-00149735⟩

• Communication dans un congrès

Confinement effects and tunneling through quantum dots

Michel Lannoo, Christophe Delerue, Guy Allan, Yann-Michel Niquet

Several recent theoretical advances concerning semiconductor quantum dots are reviewed. First of all, the effect of the quantum confinement on the energy gap is revisited on the basis of GW and Bethe–Salpeter calculations, showing that the excitonic gap is practically equal to the ordinary…

Symposium of Royal Society, 2002, London, United Kingdom. ⟨10.1098/rsta.2002.1127⟩. ⟨hal-00149686⟩

• Article dans une revue

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩

• Article dans une revue

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?

Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot

Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩

• Article dans une revue

Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

S.L. Bravina, Eric Cattan, N.V. Morozovsky, Denis Remiens

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.89-94. ⟨hal-00250394⟩