Publications

• Article dans une revue

Influence of the step covering on fatigue phenomenon for polycrystalline silicon micro-electro-mechanical-systems (MEMS)

O. Millet, Bernard Legrand, D. Collard, L. Buchaillot

Japanese Journal of Applied Physics, part 2 : Letters, 2002, 41, pp.L1339-L1341. ⟨hal-00250391⟩

• Article dans une revue

S. Carnot’s Réflexions: a theory based on non–classical Logic

Antonino Drago, Raffaele Pisano

Bulletin of Symbolic Logic, 2002, 8 (131), pp.131-132. ⟨hal-04508058⟩

• Article dans une revue

Design of optimal configuration for generating A0 Lamb mode in a composite plate using piezoceramic transducers

Sébastien Grondel, Christophe Paget, Christophe Delebarre, Jamal Assaad, K. Levin

Journal of the Acoustical Society of America, 2002, 112, pp.84-90. ⟨hal-00149900⟩

• Article dans une revue

Supercritical parametric phase conjugation of ultrasound. Numerical simulation of nonlinear and non-stationary mode

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

Journal of the Acoustical Society of America, 2002, 112, pp.2656-2665. ⟨hal-00148688⟩

• Autre publication scientifique

Conception et réalisation d'un séparateur acousto-optique de polarisation

A. Sakkour

2002. ⟨hal-00162705⟩

• Article dans une revue

From nanoelectronics to nanotechnology

Emmanuel Dubois

Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩

• Communication dans un congrès

On the physical interest of some numerical methods for wave phase conjugation in active media

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2002, pp.208. ⟨hal-00148692⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Communication dans un congrès

Analyse physique des HEMTs à base de nitrure de gallium

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩