Publications

Affichage de 5361 à 5370 sur 16273


  • Communication dans un congrès

Nano-structured top contact with low optical polarization dependence for THz generation using photodiodes

Sara Bretin, Maximilien Billet, Emilien Peytavit, Francois Vaurette, Christophe Coinon, X. Wallart, Jean-Francois Lampin, Malek Zegaoui, Guillaume Ducournau, Mohammed Zaknoune

Uni-travelling carrier photodiode (UTC-PD) with different top optical and electrical accesses are proposed towards optical polarization sensitivity reduction. With the optimized structure, only 1 percent dependence in optical polarization is obtained while ensuring good RF access. Measurements up…

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510466⟩. ⟨hal-03286176⟩

  • Communication dans un congrès

Sensibiliser les étudiants du Master Audiovisuel et Multimédia à la veille technologique

Caroline Guillaume-Blaydes, Marie Zwingelstein, François-Xavier Coudoux, Michel Pommeray, Philippe Thomin, Nicolas Vieville, Willy Yvart

Depuis 10 ans le département Développement, Recherche, Enseignement en Audiovisuel et Multimédia (DREAM) de l’université Polytechnique des Hauts-de-France (Valenciennes – France) participe chaque année au programme IABM Student Awards (International trade Association for Broadcast & Media…

13ème Colloque Enseignement des Technologies et des Sciences de l'Information et des Systèmes, CETSIS 2018, Oct 2018, Fès, Maroc. pp.201-206. ⟨hal-03549543⟩

  • Article dans une revue

Sunlight-driven water-splitting using two-dimensional carbon based semiconductors

Pawan Kumar, Rabah Boukherroub, Karthik Shankar

Journal of Materials Chemistry A, 2018, 6 (27), pp.12876-12931. ⟨10.1039/C8TA02061B⟩. ⟨hal-02375191⟩

  • Article dans une revue

High-Sensitivity Sensor Using C 60 -Single Molecule Transistor

Abdelghaffar Nasri, Aimen Boubaker, Bilel Hafsi, Wassim Khaldi, Adel Kalboussi

IEEE Sensors Journal, 2018, 18 (1), pp.248-254. ⟨10.1109/JSEN.2017.2769803⟩. ⟨hal-04422347⟩

  • Communication dans un congrès

Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Jean-Christophe Nallatamby, F Medjdoub

This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping…

13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩