Publications

• Article dans une revue

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

F Medjdoub, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Malek Zegaoui

We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a…

Electronics, 2016, 5 (1), pp.12. ⟨10.3390/electronics5010012⟩. ⟨hal-03028337⟩

• Article dans une revue

Channel sounding and indoor radio channel characteristics in the W-band

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Molina-Garcia-Pardo, Jose-Victor Rodriguez, Lorenzo Rubio, Leandro Juan-Llacer

This work presents directional radio channel measurements in the W-band using a commercial versatile channel sounder based on a vector network analyzer (VNA), capable of measuring scattering parameters from 75 to 500 GHz with frequency converters. The commercial setup has been modified by…

EURASIP Journal on Wireless Communications and Networking, 2016, 2016, pp.30,. ⟨10.1186/s13638-016-0530-7⟩. ⟨hal-03346227⟩

• Article dans une revue

Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to…

IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩. ⟨hal-03325006⟩

• Communication dans un congrès

Plasmonic analogue of electromagnetically induced transparency in detuned nano-cavities coupled to a waveguide

A. Noual, O.E. Abouti, E.H.E. Boudouti, Abdellatif Akjouj, Bahram Djafari-Rouhani, Yan Pennec

We theoretically investigate the classical analogue of electromagnetically induced transparency (EIT) in a plasmonic structure constituted by double side cavities connected symmetrically to a waveguide. The EIT is demonstrated by simply detuning the sizes of the two cavities (i.e., the length…

Mediterranean Conference on Information and Communication Technologies, MedCT 2015, May 2015, Saïdia, Morocco. pp.539-544, ⟨10.1007/978-3-319-30301-7_57⟩. ⟨hal-03508200⟩

• Communication dans un congrès

Sensitivity and Accuracy Analysis in Scanning Microwave Microscopy

Kamel Haddadi, Charlene Brillard, Gilles Dambrine, Didier Theron

The introduction of scanning microwave microscopy (SMM) tools have pioneered many applications, notably including mapping and quantitative measurement of the electrical properties of materials and devices at micro and nano scale. The ability to measure accurately and in a sensitive manner high…

IEEE MTT-S International Microwave Symposium, IMS 2016, May 2016, San Francisco, CA, United States. 4 p., ⟨10.1109/MWSYM.2016.7540188⟩. ⟨hal-03224661⟩

• Communication dans un congrès

Synthesis and characterization of BNT thin films prepared by sol-gel method

Sara Abou Dargham, Freddy Ponchel, Youssef Zaatar, Jamal Assaad, Denis Remiens, Doumit Zaouk

Polycrystalline piezoelectric lead-free Bi0.5Na0.5TiO3 (abbreviated as BNT) thin films were deposited on Pt/TiO2/SiO2/Si substrates by an optimized Sol-Gel process. The phase structure and morphology of the as-prepared product were examined by X-ray diffraction (XRD), Raman spectroscopy and…

12th International Conference on Nanosciences & Nanotechnologies & 8th International Symposium on Flexible Organic Electronics, NN15 & ISFOE15, Jul 2015, Thessaloniki, Greece. pp.810-815, ⟨10.1016/j.matpr.2016.02.013⟩. ⟨hal-03586629⟩

• Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured…

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩

• Article dans une revue

Combining combing and secondary ion mass spectrometry to study DNA on chips using ¹³C and ¹⁵N labeling

Armelle Cabin-Flaman, Anne-Francoise Monnier, Yannick Coffinier, Jean-Nicolas Audinot, David Gibouin, Tom Wirtz, Rabah Boukherroub, Henri-Noël Migeon, Aaron Bensimon, Laurent Jannière, Camille Ripoll, Victor Norris

Dynamic secondary ion mass spectrometry ( D-SIMS) imaging of combed DNA - the combing, imaging by SIMS or CIS method - has been developed previously using a standard NanoSIMS 50 to reveal, on the 50 nm scale, individual DNA fibers labeled with different, non-radioactive isotopes in vivo and to…

• Communication dans un congrès

Terahertz wireless communications using photonic and electronic devices

Guillaume Ducournau, P. Szriftgiser, F. Pavanello, P. Latzel, Mohammed Zaknoune, Emilien Peytavit, D. Bacquet, Jean-Francois Lampin

18th International Conference on Transparent Optical Networks (ICTON), Jul 2016, Trento, Italy. ⟨10.1109/ICTON.2016.7550375⟩. ⟨hal-03286179⟩

• Communication dans un congrès

Smartphone-controlled electro-wetting on dielectric microfluidics

Zhi Zeng, Kaidi Zhang, Wei Wang​, Wei-Jiang Xu, Jia Zhou

A prototype of low-cost compact digital microfluidics analysis platform controlled by a smartphone has been built. With customized circuits, the platform takes the advantages of portability and easy-application with a friendly user interface. It can manipulate droplet moving, merging and mixing…

11th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2015, Nov 2015, Chengdu, China. pp.1-4, ⟨10.1109/ASICON.2015.7517018⟩. ⟨hal-04088243⟩