Publications

• Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'.…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

• Article dans une revue

Source localisation in a reverberant plate using average coda properties and early signal strength

Hossep Achdjian, Emmanuel Moulin, Farouk Benmeddour, Jamal Assaad, Lynda Chehami

A statistical reverberation model based on the average distribution of wave packets propagating in a finite plate is described and it is shown that by fitting experimental data to theoretical expressions, either structural or source-related features can be extracted with very few sensors. An…

Acta Acustica united with Acustica, 2014, 100, pp.834-841. ⟨10.3813/AAA.918763⟩. ⟨hal-01058146⟩

• Article dans une revue

[Invited Review] SU-8 as a material for lab-on-a-chip-based mass spectrometry

S. Arscott

This short review focuses on the application of SU-8 for the microchip-based approach to the miniaturization of mass spectrometry. Chip-based mass spectrometry will make the technology commonplace and bring benefits such as lower costs and autonomy. The chip-based miniaturization of mass…

Lab on a Chip, 2014, 14 (19), pp.3668-3689, selected as " hot article ". ⟨10.1039/C4LC00617H⟩. ⟨hal-01058486⟩

• Communication dans un congrès

MILLIPRISM : millimeter wave passive radiometric imaging system

Jean-Francois Lampin, M. Zaknoune, X. Wallart, L. Desplanque, Emilien Peytavit, Guillaume Ducournau, M. Thirault, M. Werquin, S. Jonniau, N. Thouvenin, Christophe Gaquière, N. Vellas

8ème Workshop Interdisciplinaire sur la Sécurité Globale, WISG 2014, 2014, Troyes, France. ⟨hal-00939873⟩

• Article dans une revue

High reference impedance reflectometer for nonresonant matching of near-field microwave microscope tip probe

D. Glay, A. El Fellahi, T. Lasri

In this letter, we present a nonresonant high impedance reflectometer integrating a tip probe dedicated to near-field microwave microscopy. A 1-kohms reflectometer is fabricated by using lumped elements to validate the approach proposed to solve the problem of impedance mismatch between the probe…

Microwave and Optical Technology Letters, 2014, 56, pp.64-69. ⟨10.1002/mop.28018⟩. ⟨hal-00939056⟩

• Communication dans un congrès

Sensing light and sound velocities of fluids in 2D phoxonic crystal slab

Yan Pennec, R. Moiseyenko, Bahram Djafari-Rouhani, S. Amoudache, R. Tigrine, R. Lucklum, A. Khater

We study theoretically the potentiality of dual phononic-photonic (the so-called phoxonic) crystals for sensing applications. In this work, we study the transmission normal to a periodically perforated silicon slab when the surrounding medium is a liquid. We investigate the existence of well-…

13th IEEE SENSORS Conference, SENSORS 2014, Nov 2014, Valencia, Spain. pp.355-357, ⟨10.1109/ICSENS.2014.6985007⟩. ⟨hal-03508195⟩

• Communication dans un congrès

Fabrication of magnetoelastic Bragg reflectors for surface acoustic wave applications and investigation of its tuning with constant magnetic field

Anastasia Pavlova, Sergey Yankin, Abdelkrim Talbi, Jean-Claude Gerbedoen

In this work studying of 1D periodic phononic crystal (PnC) fabrication for 2 GHz and 4 GHz on Ni was done experimentally and theoretically using finite element analysis (FEA). Change of crystal acoustic properties in applied magnetic field was evaluated theoretically.

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020269⟩

• Communication dans un congrès

Impact du recuit d'activation sur la passivation par Al2O3 du silicium type p Cz

Matthieu Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, M. Gauthier, N. Le Quang

L'Al2O3 déposé par ALD est un diélectrique bien connu pour la passivation de surface du silicium type-p. Cependant, une étape de recuit post-dépôt est nécessaire pour activer la passivation. Grâce à des mesures de densités de charges effectives, de défauts d'interface, temps de vie de…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020286⟩

• Article dans une revue

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

E. Lefebvre, G. Moschetti, M. Malmkvist, L. Desplanque, X. Wallart, J. Grahn

The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have…

Semiconductor Science and Technology, 2014, 29, 035010, 7p. ⟨10.1088/0268-1242/29/3/035010⟩. ⟨hal-00941533⟩

• Communication dans un congrès

Optical properties of nanoporous gallium nitride for photonic applications

Bandar Alshehri

The aim of this research is to characterize the optical properties of a gallium nitride thin film grown on sapphire by MOCVD. Nanoporous of gallium nitride are formed by electrochemical etching. Refractive index, thickness and birefringence are extracted from the nanoporous thin film. Prism…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020289⟩