Publications

Affichage de 7651 à 7660 sur 16279


  • Communication dans un congrès

RF power potential of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, D. Gloria

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩

  • Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 1st ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2013, 978-94-007-4144-7. ⟨hal-04515868⟩

  • Communication dans un congrès

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

R. Malmqvist, R. Jonsson, C. Samuelsson, A. Gustafsson, S. Reyaz, D. Dancila, A. Rydberg, B. Grandchamp, S. Seok, M. Fryziel, P.A. Rolland, P. Rantakari, M. Lahti, T. Vaha-Heikkla, R. Baggen

This paper presents the results of some reconfigurable RF-MEMS switching circuits and antennas fabricated using GaAs MMIC and LTCC based processes. Wafer-level packaged GaAs RF-MEMS series and shunt switches demonstrating low losses (≤0.5 dB) up to 40 GHz are presented together with a compact Ka-…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9056, 83-88, ⟨10.1109/SMICND.2013.6688097⟩. ⟨hal-00922405⟩

  • Ouvrages

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy

Raffaele Pisano, Danilo Capecchi, Anna Lukešová

The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, 2013, 978-609-95513-0-2. ⟨hal-04517712⟩

  • Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

  • Communication dans un congrès

22 Gbps wireless communication system at 0.4 THz

Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin

By combining a lJTC-PD as a THz emitter and a 400 G Hz Schottky-based heterodyne detection, we realized an indoor THz link working up to 22 Gbps at 400 GHz carrier frequency with ultra-low THz power. The eye diagram at receiver is clearly opened are the system is working with only 1 mu W received…

38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩