Publications

• Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

• Article dans une revue

Coplanar liquid crystal reconfigurable phase-shifters

Fehim Sahbani, Nicolas Tentillier, Christian Legrand, Karine Blary, A. Gharsallah, A. Gharbi

A coplanar liquid crystal phase-shifter is presented and characterized in the frequency range of 5–40 GHz. The interest of this structure lies in the technological realization which is very simple. The phase-shift variation is of 0.2°/cm/GHz for an attenuation of 2.5 dB/cm at 40 GHz. These…

Molecular Crystals and Liquid Crystals, 2011, Issue 1: Proceedings of the 23rd International Liquid Crystal Conference (ILCC 2010) Part III of VIII Submit an article, 542, pp.204-212. ⟨10.1080/15421406.2011.570587⟩. ⟨hal-00795916⟩

• Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩

• Article dans une revue

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayer thickness

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate surface preparation on the microstructure of GaSb grown on GaAs (001) by molecular beam epitaxy. The geometric phase analysis method is used to analyze the interface dislocation type and the…

Journal of Applied Physics, 2011, 109, pp.023509-1-6. ⟨10.1063/1.3532053⟩. ⟨hal-00572649⟩

• Article dans une revue

Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.104101-1-3. ⟨10.1143/APEX.4.104101⟩. ⟨hal-00639827⟩

• Article dans une revue

Poole-Frenkel assisted emissions from a barrier trap in AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Electron Devices, 2011, 11, pp.538-543. ⟨hal-00639919⟩

• Article dans une revue

One port contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, S.X. Wang, X.Z. Zhao, S. Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication…

Microelectronic Engineering, 2011, 88, pp.3003-3010. ⟨10.1016/j.mee.2011.04.062⟩. ⟨hal-00639933⟩

• Article dans une revue

Magnonic circuits and crystals

Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski

In the frame of the long-wavelength Heisenberg model, a simple magnonic mono-mode circuit is designed to obtain transmission stop (pass) bands where the propagation of spin waves is forbidden (allowed). This simple device is composed of an infinite one-dimensional monomode waveguide (the backbone)…

Surface Science Reports, 2011, 66, pp.29-75. ⟨10.1016/j.surfrep.2010.10.002⟩. ⟨hal-00572644⟩

• Article dans une revue

Resolution limit of a phononic crystal superlens

J.F. Robillard, J. Bucay, P.A. Deymier, A. Shelke, K. Muralidharan, B. Merheb, Jerome O. Vasseur, A. Sukhovich, J.H. Page

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.224301-1-11. ⟨10.1103/PhysRevB.83.224301⟩. ⟨hal-00603011⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon…

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩