Publications

• Communication dans un congrès

New unpackaged infrared microsensors for house automation

K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, Didier Leclercq

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, unknown, Morocco. CDROM, session A4, papier 166, 1-5. ⟨hal-00591379⟩

• Article dans une revue

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O3 thin films deposited by radio frequency sputtering

Denis Remiens, L. Yang, Freddy Ponchel, Jean-François Legier, D. Chateigner, Gang Wang, X. Dong

Journal of Applied Physics, 2011, 109, pp.114106-1-11. ⟨10.1063/1.3592282⟩. ⟨hal-00603029⟩

• Communication dans un congrès

Study of pulse waveforms for testing in mode stirred reverberating chamber

V. Deniau, L. Kone, M. Ayad, B. Renoncourt, J. Rioult

EMC Europe 2011, 2011, York, United Kingdom. pp.778-783. ⟨hal-00800320⟩

• Article dans une revue

Performance of multi-relay coded cooperative diversity in asynchronous code-division multiple-access over fading channels

A. Eid, W. Hamouda, Iyad Dayoub

IET Communications, 2011, 5, pp.683-692. ⟨10.1049/iet-com.2010.0478⟩. ⟨hal-00597103⟩

• Article dans une revue

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report…

IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.1172-1179. ⟨10.1109/TNANO.2011.2123913⟩. ⟨hal-00639857⟩

• Article dans une revue

Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology

N. Clement, G. Patriarche, K. Smaali, Francois Vaurette, K. Nishiguchi, David Troadec, A. Fujiwara, D. Vuillaume

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical…

Small, 2011, 7, pp.2607-2613. ⟨10.1002/smll.201100915⟩. ⟨hal-00639861⟩

• Communication dans un congrès

Antenne microstrip alimentée par fente inversée pour l'intégration hétérogène 3D (system-in-package) en gamme millimétrique [60GHz]

T. Sarrazin, R. Crunelle, O. Lafond, Mohamed Himdi, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 327, 4E7, 1-4. ⟨hal-00597140⟩

• Article dans une revue

Unit cell structure of crystal polytypes in InAs and InSb nanowires

D. Kriegner, C. Panse, B. Mandl, K.A. Dick, M. Keplinger, J.M. Persson, P. Caroff, D. Ercolani, L. Sorba, F. Bechstedt, J. Stangl, G. Bauer

Nano Letters, 2011, 11, pp.1483-1489. ⟨10.1021/nl1041512⟩. ⟨hal-00591318⟩

• Article dans une revue

Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method

J. Bolinsson, P. Caroff, B. Mandl, K.A. Dick

Nanotechnology, 2011, 22, pp.265606-1-10. ⟨10.1088/0957-4484/22/26/265606⟩. ⟨hal-00597079⟩

• Article dans une revue

Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53 Ti 0.47O3 (PZT)/Pt and annealing effect

L. Kerkache, A. Layadi, El Hadj Dogheche, Denis Remiens

Journal of Alloys and Compounds, 2011, 509, pp.6072-6076. ⟨10.1016/j.jallcom.2011.03.022⟩. ⟨hal-00591328⟩