Publications

• Communication dans un congrès

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

• Communication dans un congrès

Digital compensation of the power amplifier nonlinearities at relay station receivers in 802.16j very high data rate systems

J. Zeleny, P. Rosson, C. Dehos, A. Kaiser

IEEE Radio and Wireless Symposium, RWS 2010, 2010, United States. pp.244-247, ⟨10.1109/RWS.2010.5434157⟩. ⟨hal-00549975⟩

• Communication dans un congrès

325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology

F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud

40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩

• Communication dans un congrès

Résonateurs à ondes acoustiques guidées sur miroir de Bragg pour communications radio-fréquences

Issiaka Koné, Frédéric Domingue, Alexandre Reinhardt, Fabrice Casset, Marc Aïd, Jean-François Carpentier, Lionel Buchaillot, Bertrand Dubus

Les résonateurs à ondes acoustiques de volumes (appelés résonateurs BAW pour Bulk Acoustic Wave) sont des composants particulièrement attractifs pour les communications radio-fréquences (f > 1 GHz). Ils permettent de réaliser des filtres aux performances accrues et aux encombrements et coûts…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00542598⟩

• Article dans une revue

Replication of the Trouton-Noble experiment

R. Gabillard, C. Semet, P. Cornille, C. Bizouard

Chinese Journal of Physics, 2010, 48, pp.427-438. ⟨hal-00549477⟩

• Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated…

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

• Article dans une revue

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate : analysis by two-dimensional tangential finite element method

Freddy Ponchel, J. Midy, Jean-François Legier, Caroline Soyer, Denis Remiens, T. Lasri, G. Gueguan

Journal of Applied Physics, 2010, 107, pp.054112-1-5. ⟨10.1063/1.3309423⟩. ⟨hal-00549504⟩

• Article dans une revue

Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure

P. Borowik, Jean-Luc Thobel, L. Adamowicz

Results of multiparticle Monte Carlo simulations of midinfrared quantum cascade lasers structure initially fabricated by Page et al. are presented. The main aim of this paper is to discuss in details how electric current flows through the structure and which subbands are involved in this process.…

Journal of Applied Physics, 2010, 108 (7), pp.073106. ⟨10.1063/1.3488909⟩. ⟨hal-00549482⟩

• Article dans une revue

Development of a new generation of active AFM tools for applications in liquids

A.S. Rollier, D.F.L. Jenkins, El Hadj Dogheche, Bernard Legrand, M. Faucher, L. Buchaillot

Journal of Micromechanics and Microengineering, 2010, 20, pp.085010-1-11. ⟨10.1088/0960-1317/20/8/085010⟩. ⟨hal-00548990⟩

• Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTs

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

SPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States. ⟨hal-01904174⟩