Publications

Affichage de 14981 à 14990 sur 16458


  • Communication dans un congrès

Realization, characterization and modelling of pentacene based organic thin film transistors

K. Lmimouni, M. Berliocchi, Denis Remiens, D. Vuillaume, A. Bolognesi, A. Pecchia, A. Di Carlo, P. Lugli

INF Meeting, 2002, Bari, Italy. ⟨hal-00148724⟩

  • Article dans une revue

Supercritical parametric phase conjugation of ultrasound. Numerical simulation of nonlinear and non-stationary mode

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

Journal of the Acoustical Society of America, 2002, 112, pp.2656-2665. ⟨hal-00148688⟩

  • Article dans une revue

Influence of the step covering on fatigue phenomenon for polycrystalline silicon micro-electro-mechanical-systems (MEMS)

O. Millet, Bernard Legrand, D. Collard, L. Buchaillot

Japanese Journal of Applied Physics, part 2 : Letters, 2002, 41, pp.L1339-L1341. ⟨hal-00250391⟩

  • Article dans une revue

Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, Virginie Hoel, M. Werquin, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, I. Daumiller, E. Kohn

Microwave and Optical Technology Letters, 2002, 34, pp.4-6. ⟨hal-00149695⟩

  • Article dans une revue

Very high broadband electromagnetic characterization method of film-shaped materials using coplanar

J. Hinojosa, K. Lmimouni, Sylvie Lepilliet, Gilles Dambrine

Microwave and Optical Technology Letters, 2002, 33, pp.352-355. ⟨hal-00147839⟩

  • Article dans une revue

S. Carnot’s Réflexions: a theory based on non–classical Logic

Antonino Drago, Raffaele Pisano

Bulletin of Symbolic Logic, 2002, 8 (131), pp.131-132. ⟨hal-04508058⟩

  • Article dans une revue

Design of optimal configuration for generating A0 Lamb mode in a composite plate using piezoceramic transducers

Sébastien Grondel, Christophe Paget, Christophe Delebarre, Jamal Assaad, K. Levin

Journal of the Acoustical Society of America, 2002, 112, pp.84-90. ⟨hal-00149900⟩

  • Communication dans un congrès

Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor

E. Lefebvre, M. Zaknoune, F. Mollot

14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩