Publications

Affichage de 7711 à 7720 sur 16448


  • Article dans une revue

Towards an ab-initio description of the charge transfer between a proton and a lithium fluoride surface : a quantum chemistry approach

P. Tiwald, S. Gräfe, J. Burgdörfer, L. Wirtz

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013, 317, pp.18-22. ⟨10.1016/j.nimb.2012.12.097⟩. ⟨hal-00913584⟩

  • Article dans une revue

Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott insulators AM4Q8

Benoît Corraze, Etienne Janod, Laurent Cario, P. Moreau, L. Lajaunie, P. Stoliar, V. Guiot, Vincent Dubost, J. Tranchant, Stéphanie Salmon, Marie-Paule Besland, V. Ta Phuoc, Tristan Cren, D. Roditchev, N. Stephant, David Troadec, M. Rozenberg

The European Physical Journal. Special Topics, 2013, 222, pp.1046-1056. ⟨10.1140/epjst/e2013-01905-1⟩. ⟨hal-00872035⟩

  • Article dans une revue

Substrate mode-integrated SPR sensor

C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette

Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩

  • Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

  • Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

  • Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

  • Communication dans un congrès

22 Gbps wireless communication system at 0.4 THz

Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin

By combining a lJTC-PD as a THz emitter and a 400 G Hz Schottky-based heterodyne detection, we realized an indoor THz link working up to 22 Gbps at 400 GHz carrier frequency with ultra-low THz power. The eye diagram at receiver is clearly opened are the system is working with only 1 mu W received…

38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩

  • Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩