Publications
Affichage de 13681 à 13690 sur 16551
Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs
G. Mahieu, B. Grandidier, D. Deresmes, J.-P. Nys, D. Stievenard, P. Ebert
Physical Review Letters, 2005, 94, pp.26407-1-4. ⟨10.1103/PhysRevLett.94.026407⟩. ⟨hal-00126234⟩
Study of structural and optical properties of InSb-doped SiO2 thin films
B. Capoen, V.Q. Lam, S. Turrell, Jean-Pierre Vilcot, F. Beclin, Y. Jestin, M. Bouazaoui
Journal of Non-Crystalline Solids, 2005, 351, pp.1819-1824. ⟨hal-00130828⟩
A nanofluidic electrospray source fabricated using focused ion beam etching
C. Descatoire, David Troadec, A. Ashcroft, L. Buchaillot, S. Arscott
2005, pp.241-244. ⟨hal-00130827⟩
A polysilicon nanoelectrospray-mass spectrometry source based on a microfluidic capillary slot
S. Arscott, S. Le Gac, C. Rolando
Sensors and Actuators B: Chemical, 2005, 106, pp.741-749. ⟨hal-00128654⟩
Growth of silicon nanowires over Au nanoparticles supported on high surface oxide substrates
D. Bahloul-Hourlier, D. Luxembourg, D. Stievenard, P. Marecot, A. Addad, E. Payen
NSF-CNRS-IFP Workshop - Future directions in catalysis : nanostructured catalysts, 2005, Lyon, France. ⟨hal-00247493⟩
Theory of one-dimensional acoustic wave phase conjugation
A. Merlen, Q. Zhang
IEEE International Ultrasonics Symposium, 2005, Netherlands. pp.2097-2099. ⟨hal-00247436⟩
Power line communication, application to indoor and in-vehicule data transmission
Virginie Degardin, M. Olivas-Carrion, Pierre Laly, M. Lienard, Pierre Degauque
Proceedings of Cost 286 Meeting, 2005, Split, Croatia. ⟨hal-00140804⟩
Ultrasonic evaluation of residual stress in flat glass tempering by an original double interferometric detection
D. Devos, Marc Duquennoy, E. Romero, Frédéric Jenot, Dominique Lochegnies, Mohammadi Ouaftouh, Mohamed Ourak
Proceedings of the 2005 Joint World Congress on Ultrasonics/Ultrasonics International, WCU/UI'05, 2005, Beijing, China. ⟨hal-00140793⟩
Resonant Raman scatterring study of Ar<sup>+</sup> ion-implanted AlGaN
B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière
Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩