Publications
Affichage de 16011 à 16020 sur 16434
Modeling and Optimisation of Optoelectronics devices
Joseph Harari, Vincent Magnin
29th European Solid-State Device Research Conference (ESSDERC'99), IEEE, 1999, 2-86332-245-1. ⟨hal-04449542⟩
Etude du contact ohmique Ti/Al/Ni/Au sur n-GaN pour applications hyperfréquences et haute température de TECs de puissance
B. Boudart, S. Trassaert, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier
7es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1999, Egat, France. ⟨hal-01654466⟩
Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical and carrier transport physical coupled models
Stéphane Beaussart, Oliver Perrin, Marie-Renée Friscourt, Christophe Dalle
IEEE Transactions on Microwave Theory and Techniques, 1999, 47, pp.929-934. ⟨10.1109/22.769328⟩. ⟨hal-00005341⟩
EAO des circuits microondes en régime temporel : approche physique
Christophe Dalle, M.R. Friscourt
11èmes Journées Nationales Microondes, 1999, Arcachon, France. ⟨hal-00005311⟩
Terahertz time-domain spectroscopy of films fabricated from SU-8
S. Arscott, F. Garet, P. Mounaix, L. Duvillaret, J.-L. Coutaz, D. Lippens
Electronics Letters, 1999, 35 (3), pp.243. ⟨10.1049/el:19990146⟩. ⟨hal-02348056⟩
Pulsed measurements of GaN MESFET
B. Boudart, S. Trassaert, Christophe Gaquière, Didier Theron, Y. Crosnier, Fabrice Huet, M.A. Poisson
GAAS 99, 1999, Munich, Germany. ⟨hal-01649413⟩
Metal-semiconductor-metal photodetectors
Joseph Harari, Jean-Pierre Vilcot, Didier Decoster
Wiley Encyclopedia of Electrical and Electronics Engineering, Volume 12, Wiley, pp.561-577, 1999. ⟨hal-00132302⟩
High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits
Gilles Dambrine, J.-P. Raskin, Francois Danneville, D. Vanhoenackel Janvier, J.-P. Colinge, A. Cappy
IEEE Transactions on Electron Devices, 1999, 46 (8), pp.1733-1741. ⟨10.1109/16.777164⟩. ⟨hal-03612809⟩
Large signal and pulse instabilities in GaN HFETs
Erhard Kohn, E Strobel, I. Daumiller, Christophe Gaquière, B. Boudart, Didier Theron, N.X. Nguyen, C.N. Nguyen
1st Gallium Nitride Electronic Device Workshop, 1999, Cornell, United States. ⟨hal-01654323⟩
Transferred InP-based HBVs on glass substrate
S. Arscott, P. Mounaix, D. Lippens
Electronics Letters, 1999, 35 (17), pp.1493. ⟨10.1049/el:19990984⟩. ⟨hal-02348069⟩