Publications

Affichage de 5821 à 5830 sur 16302


  • Article dans une revue

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

Steven Duffy, Brahim Benbakhti, Maghnia Mattalah, Wei Zhang, Meriem Bouchilaoun, Mohammed Boucherta, Karol Kalna, Nour Eddine Bourzgui, Maher, Hassan, Ali Soltani

An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer…

ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040 - S3043. ⟨10.1149/2.0111711jss⟩. ⟨hal-01914382⟩

  • Article dans une revue

On demand electrochemical release of drugs from porous reduced graphene oxide modified flexible electrodes

Samia Boulahneche, Roxana Jijie, Alexandre Barras, Fereshteh Chekin, Santosh K Singh, Julie Bouckaert, Mohamed Salah Medjram, Sreekumar Kurungot, Rabah Boukherroub, Sabine Szunerits

Despite the advantages of an electrochemical control for drug release, only a handful of electrochemical-based release systems have been developed so far. We report herein on the development of an electrochemically activatable platform for on-demand delivery of drugs. It is based on flexible gold…

Journal of materials chemistry‎ B, 2017, 5 (32), pp.6557-6565. ⟨10.1039/C7TB00687J⟩. ⟨hal-01679631⟩

  • Communication dans un congrès

Experimental investigation of stochastic resonance in a 65 nm CMOS artificial neuron

Sara Hedayat, Ilias Sourikopoulos, Christophe Loyez, Francois Danneville, Laurent Clavier, Virginie Hoel, A. Cappy

This work proposes an experimental demonstration of the stochastic resonance, a phenomenon widely observed in biology using a 65 nm CMOS artificial neuron. The stochastic resonance has been revealed through two different statistical studies. Moreover, when optimal, a signal to noise ratio at the…

International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. ⟨10.1109/ICNF.2017.7985962⟩. ⟨hal-03270101⟩