Publications

• Communication dans un congrès

Development of a reference wafer for on-wafer testing of extreme impedance devices

H. Votsi, I. Roch-Jeune, Kamel Haddadi, C. Li, Gilles Dambrine, P. H. Aaen, N. Ridler

This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in…

88th ARFTG Microwave Measurement Symposium, ARFTG 2016, Dec 2016, Austin, United States. 4 p., ⟨10.1109/ARFTG.2016.7839719⟩. ⟨hal-03224658⟩

• Article dans une revue

High photocatalytic activity of plasmonic Ag@AgCl/Zn2 SnO4 nanocomposites synthesized using hydrothermal method

Monaam Ben Ali, Abderrahmane Hamdi, Habib Elhouichet, Brigitte Sieber, Ahmed Addad, Yannick Coffinier, Luc Boussekey, Mokhtar Férid, Sabine Szunerits, Rabah Boukherroub

Ag@AgCl/Zn 2 SnO 4 (ZTO) nanocomposites were successfully prepared by a hydrothermal method.

RSC Advances, 2016, 6 (83), pp.80310-80319. ⟨10.1039/C6RA14813A⟩. ⟨hal-03837468⟩

• Article dans une revue

Wetting characterization of high aspect ratio nanostructures by gigahertz acoustic reflectometry

Christophe Virgilio, Julien Carlier, Pierre Campistron, Malika Toubal, Philippe Garnier, L. Broussous, V. Thomy, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device…

International Journal of Mechanical and Mechatronics Engineering, 2016, 10 (3), pp.413-418. ⟨hal-03560404⟩

• Communication dans un congrès

Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Julien Borrel, Louis Hutin, Helen Grampeix, Emmanuel Nolot, Magali Tessaire, Guillaume Rodriguez, Yves Morand, Fabrice Nemouchi, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19. ⟨hal-03325000⟩

• Communication dans un congrès

Etude par nanoindentation des proprietes mecaniques du multicouche constituant une cellule solaire a base de cigs

Hocine Abib, Alain Iost, Alex Montagne, Khadidja Rahmoun, Boubakeur Ayachi, Jean-Pierre Vilcot

Le but de notre travail est d'évaluer les propriétés mécaniques des différentes couches constituant une cellule solaire à base de CIGS afin d'en appréhender, à terme, leur influence sur la durée de vie de la cellule. Nous rapportons principalement les valeurs de la dureté et le module de…

Indentation 2016, Oct 2016, Lille, France. ⟨hal-03169269⟩

• Article dans une revue

Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Chris Bishop, Yacine Halfaya, Ali Soltani, Suresh Sundaram, Xin Li, Jérémy Streque, Youssef El Gmili, Paul B Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden

We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100°C-400°C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved…

IEEE Sensors Journal, 2016, 16 (18), pp.6828-6838. ⟨10.1109/JSEN.2016.2593050⟩. ⟨hal-02385234⟩

• Communication dans un congrès

New Optical Approach of SAW Delay Line Characterization

Lyes Djoumi, Nikolay Smagin, Meddy Vanotti, Dame Fall, Etienne Herth, Marc Duquennoy, Mohammadi Ouaftouh, Virginie Blondeau-Patissier, Frédéric Jenot

Surface acoustic wave devices are usually characterized solely through their electrical parameters. Mechanical displacements can also be numerically computed using finite element software. In this paper, we show that this characterization can be supplemented using an interferometer system capable…

30th Eurosensors Conference, EUROSENSORS XXX, Sep 2016, Budapest, Hungary. pp.838-843. ⟨hal-03586205⟩

• Article dans une revue

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

K.K. Sossoe, Corentin Durand, L. Mathey, T. Alphazan, A. Sylla, M.M. Dzagli, A. Mohou, J.P. Nys, Maxime Berthe, C. Thieuleux, C. Coperet, J.P. Barnes, B. Grandidier

Microelectronic Engineering, 2016, 149, pp.125-128. ⟨10.1016/j.mee.2015.10.002⟩. ⟨hal-02084763⟩

• Article dans une revue

Combining combing and secondary ion mass spectrometry to study DNA on chips using ¹³C and ¹⁵N labeling

Armelle Cabin-Flaman, Anne-Francoise Monnier, Yannick Coffinier, Jean-Nicolas Audinot, David Gibouin, Tom Wirtz, Rabah Boukherroub, Henri-Noël Migeon, Aaron Bensimon, Laurent Jannière, Camille Ripoll, Victor Norris

Dynamic secondary ion mass spectrometry ( D-SIMS) imaging of combed DNA - the combing, imaging by SIMS or CIS method - has been developed previously using a standard NanoSIMS 50 to reveal, on the 50 nm scale, individual DNA fibers labeled with different, non-radioactive isotopes in vivo and to…

• Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured…

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩