Publications

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current…

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩

• Communication dans un congrès

Growth of zinc oxide nanorods in water vapor environment and its promising role in solar cell

Basma El Zein, I. Gereige, S. Boulfrad, A. Gokarna, El Hadj Dogheche, Didier Decoster, S. Habib, G. Jabbour

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800057⟩

• Communication dans un congrès

Growth of antimony-containing nanowires

Philippe Caroff, Kimberly A. Dick, C. Thelander, S.R. Plissard, X. Wallart

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591392⟩

• Article dans une revue

Erbium silicide growth in the presence of residual oxygen

N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, J. Ratajczak, Adriana Vlad, C.A. Dutu, J.P. Raskin

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its…

Journal of The Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075v2⟩

• Communication dans un congrès

Comparison between H.264/AVC intra transrating schemes based on frequency position and frequency level selectivity

Christophe Deknudt, A.S. Bacquet, Patrick Corlay, Marie Zwingelstein, François-Xavier Coudoux

6th IEEE International Symposium on Broadband Multimedia Systems and Broadcasting, BMSB 2011, 2011, Nuremberg, Germany. pp.1-5, ⟨10.1109/BMSB.2011.5954972⟩. ⟨hal-00800169⟩

• Communication dans un congrès

Properties of GaN and InN films in terahertz range

A. Gauthier-Brun, J.H. Teng, W. Liu, M. Tonouchi, El Hadj Dogheche, A. Gokarna, S.J. Chua, Didier Decoster

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800062⟩

• Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin silicon membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor-Torres

7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011, 2011, Granada, Spain. pp.125-126. ⟨hal-00800088⟩

• Communication dans un congrès

Performances of InAlN/AlN/GaN HEMTs on sapphire substrate

F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, Virginie Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, Jean-Claude de Jaeger

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800127⟩