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Affichage de 10901 à 10910 sur 16459

Communication dans un congrès

Métamatériaux térahertz sous incidence normale : application à la réfraction négative à partir d'un prisme

Nasser Soltani, Frédéric Garet, Charles Croënne, Karine Blary, Eric Lheurette, Jean-Louis Coutaz, Didier Lippens

Assemblée Générale du GDR Interférences d'Ondes, Nov 2009, Paris, France. pp.138-139. ⟨hal-00480351⟩

Article dans une revue

Left-handed dispersion of a stack of sub-wavelength hole metal array et terahertz frequencies

Charles Croënne, F. Garet, Eric Lheurette, J.-L. Coutaz, D. Lippens

We report on the electromagnetic response of a stack of subwavelength hole metal arrays. The samples were designed for exhibiting left handed dispersion branches under normal incidence, and their transmissivities were optimized via the fabrication of elliptical-shaped holes. They are constituted of…

Applied Physics Letters, 2009, 94 (13), pp.133112. ⟨10.1063/1.3114411⟩. ⟨hal-00991807⟩

Article dans une revue

A magnetically actuated, high momentum rate MEMS pulsed microjet for active flow control

O. Ducloux, R. Viard, Abdelkrim Talbi, L. Gimeno, Y. Deblock, Philippe Pernod, Vladimir Preobrazhensky, A. Merlen

Journal of Micromechanics and Microengineering, 2009, 19, pp.115031-1-7. ⟨10.1088/0960-1317/19/11/115031⟩. ⟨hal-00469646⟩

Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency…

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

Article dans une revue

2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications

Malek Zegaoui, Nargess Choueib, Joseph Harari, Didier Decoster, V. Magnin, X. Wallart, Jean Chazelas

This letter demonstrates a 2 × 2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive…

IEEE Photonics Technology Letters, 2009, 21 (19), pp.1357-1359. ⟨10.1109/LPT.2009.2026484⟩. ⟨hal-00472780⟩

Communication dans un congrès

Integration and optimisation of ferroelectric thin films in micro and nano dimensional structures

Denis Remiens

Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00575745⟩

Article dans une revue

Recent developments of an opto-electronic THz spectrometer for high-resolution spectroscopy

Francis Hindle, Chun Yang, Gaël Mouret, Arnaud Cuisset, Robin Bocquet, Jean-Francois Lampin, Karine Blary, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau

A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the…

Sensors, 2009, 9, pp.9039-9057. ⟨10.3390/s91109039⟩. ⟨hal-00471953⟩