Publications

• Article dans une revue

Mechanical properties determined by nano indentation tests of Pb(Zr,Ti)O3 and Pb(Mg1/3 Nb2/3)1-x TixO3) sputtered thin films

P. Delobelle, E. Fribourg-Blanc, Denis Remiens

Thin Solid Films, 2006, 515, pp.1385-1393. ⟨hal-00138710⟩

• Communication dans un congrès

Design of low frequency acoustic sensor for wheat dough study in kneading and fermentation phases

Georges Nassar, A. Skaf, Fabrice Lefebvre, Bertrand Nongaillard, R. Dib

2006, pp.1153-1163. ⟨hal-00138738⟩

• Article dans une revue

Effect of a Se monolayer on interface properties between Al2O3 and n-type Si(100)

G. Larrieu, M. Tao, N. Moumen, E. Moldonado, W.P. Kirk, G. Song, W. Bai, D.L. Kwong

Transactions of the Electrochemical Society, 2006, 1, pp.371. ⟨hal-00138658⟩

• Article dans une revue

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

R. Rengel, M.J. Martin, T. Gonzalez, J. Mateos, D. Pardo, Gilles Dambrine, J.P. Raskin, Francois Danneville

IEEE Transactions on Electron Devices, 2006, 53, pp.523-532. ⟨hal-00126521⟩

• Communication dans un congrès

Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology

F. Gianesello, D. Gloria, C. Raynaud, C. Tinella, P. Vincent, F. Saguin, S. Boret, C. Clement, B. van Haaren, J.M. Fournier, Gilles Dambrine, P. Benech

2006, pp.248-251. ⟨hal-00126802⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of…

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Article dans une revue

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m

Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth.…

Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-01552875⟩

• Communication dans un congrès

Raman spectroscopy characterization of single Si-nanowires

M. Marczak, C. Jastrzebski, W. Gebricki, M. Zdrojek, Thierry Melin, D. Hourlier

6th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2006, 2006, Cranfield, United Kingdom. ⟨hal-00243977⟩