Publications

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/3]

Raffaele Pisano

2019. ⟨hal-04510995⟩

• Article dans une revue

Numerical Modelling of Vibration Characteristics of a Partially Metallized Micro Electromechanical System Resonator Disc

Ismail Naciri, Abdessamad Rguiti, Lahoucine Elmaimouni, Jean-Etienne Lefebvre, Faniry Emilson Ratolojanahary, J. G. Yu, Youssef Belkassmi, Ali El Moussati

In this paper, we report an extension of a polynomial and numerical vibrational characterization of an annular piezoelectric disc resonator partially covered with electrodes. The three governing partial differential equations of motion are solved to provide the frequency response of the…

Acta Acustica united with Acustica, 2019, 105 (6), pp.1164-1172. ⟨10.3813/AAA.919393⟩. ⟨hal-03148966⟩

• Article dans une revue

Optimization of surface treatment on MEMS probes for single-cell capture and release

Kensaku Hayashi, Momoko Kumemura, Shohei Kaneda, Vivek Menon, Laurent Jalabert, Saeko Tachikawa, Mehmet Tarhan, Teruo Fujii, Beomjoon Kim, Hiroyuki Fujita

Micro-electromechanical systems (MEMS) tweezers developed for the trapping and characterization of bio molecules such as DNA are also capable of cell handling, which will enable further application involving single cell characterization. However, cellular adhesion to Si tweezers surfaces can…

Sensors and Materials, 2019, 31 (9), pp.2873. ⟨10.18494/SAM.2019.2322⟩. ⟨hal-03153240⟩

• Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• Article dans une revue

Fusion of transformed shallow features for facial expression recognition

Fares Bougourzi, Karim Mokrani, Yassine Ruichek, Fadi Dornaika, Abdelkrim Ouafi, Abdelmalik Taleb-Ahmed

Facial expression conveys important signs about the human affective state, cognitive activity, intention and personality. In fact, the automatic facial expression recognition systems are getting more interest year after year due to its wide range of applications in several interesting fields such…

IET Image Processing, 2019, 13 (9), pp.1479-1489. ⟨10.1049/iet-ipr.2018.6235⟩. ⟨hal-03138559⟩

• Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

• Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

• Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩

• Communication dans un congrès

Energy-efficient techniques for combating the influence of reactive jamming using Non-Orthogonal Multiple Access and Distributed Antenna Systems

Joumana Farah, Jacques Akiki, Eric Pierre Simon

The aim of this work is to propose new approaches for maximizing the energy efficiency of downlink 5G mobile communication systems, in the presence of a reactive jammer. The concepts of non-orthogonal multiple access (NOMA) and distributed antenna systems (DAS) are exploited to devise joint subband…

Wireless Telecommunications Symposium (WTS 2019), Apr 2019, New York, NY, United States. ⟨10.48550/arXiv.1903.11574⟩. ⟨hal-04542881⟩

• N°spécial de revue/special issue

History of Machines and Mechanisms [Special Issue]

Marco Ceccarelli, Raffaele Pisano

Advances in Historical Studies, 8 (1), 2019. ⟨hal-04511002⟩