Publications

• Communication dans un congrès

Analysis of microwave detection with GaN HEMTs under RF probes

Hector Sanchez-Martin, Ester Pérez-Martín, Philippe Altuntas, Virginie Hoel, Stéphane Rennesson, Yvon Cordier, J.A. Novoa, Susana Pérez, Tomás González, Javier Mateos, Ignacio Íñiguez-De-La-Torre

Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2018, May 2018, Bucharest, Romania. ⟨hal-03340979⟩

• Article dans une revue

Aqueous medium-induced micropore formation in plasma polymerized polystyrene: an effective route to inhibit bacteria adhesion

Roxana Jijie, Alexandre Barras, Teodora Teslaru, Ionut Topala, Valentin Pohoata, Marius Dobromir, Tetiana Dumych, Julie Bouckaert, Sabine Szunerits, Nicoleta Dumitrascu, Rabah Boukherroub

Journal of materials chemistry‎ B, 2018, 6 (22), pp.3674 - 3683. ⟨10.1039/c7tb02964k⟩. ⟨hal-01925084⟩

• Communication dans un congrès

Exploring the feasibility of indoor human positioning by using radio channel properties of a single link

Y Miao, E Tanghe, R Aminzadeh, Pierre Laly, Davy Gaillot, M Lienard, R Berkvens, M Weyn, D Plets, L Martens, W Joseph

2nd URSI Atlantic Radio Science Conference, AT-RASC 2018, May 2018, Gran Canaria, Spain. paper F01-3, 892-895, ⟨10.23919/URSI-AT-RASC.2018.8471641⟩. ⟨hal-03346233⟩

• Article dans une revue

Molecular signature of polyoxometalates in electron transport of silicon-based molecular junctions

Maxime Laurans, Kevin Dalla Francesca, Florence Volatron, Guillaume Izzet, David Guérin, Dominique Vuillaume, Stéphane Lenfant, Anna Proust

Polyoxometalates (POMs) are unconventional electro-active molecules with a great potential for applications in molecular memories, providing efficient processing steps onto electrodes are available. The synthesis of the organic–inorganic polyoxometalate hybrids [PM11O39{Sn(C6H4)C[triple bond,…

Nanoscale, 2018, 10 (36), pp.17156-17165. ⟨10.1039/C8NR04946G⟩. ⟨hal-01981040⟩

• Article dans une revue

Highly confined Love waves modes by defect states in a holey SiO2/quartz phononic crystal

Yuxin Liu, Abdelkrim Talbi, Philippe Pernod, Olivier Bou Matar

Highly confined Love modes are demonstrated in a phononic crystal based on a square array of etched holes in SiO2 deposited on the ST-cut quartz. An optimal choice of the geometrical parameters contributes to a wide stop-band for shear waves' modes. The introduction of a defect by removing…

Journal of Applied Physics, 2018, 124, pp.145102. ⟨10.1063/1.5040069⟩. ⟨hal-01883664⟩

• Article dans une revue

10-Gb/s Indoor THz Communications Using Industrial Si Photonics Technology

Elsa Lacombe, Cybelle Belem-Gonçalves, Cyril Luxey, Frédéric Gianesello, Cédric Durand, Daniel Gloria, Guillaume Ducournau

In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic…

IEEE Microwave and Wireless Components Letters, 2018, 28 (4), pp.362-364. ⟨10.1109/LMWC.2018.2811242⟩. ⟨hal-03183484⟩

• Article dans une revue

Optical transmission properties of an anisotropic defect cavity in one-dimensional photonic crystal

Noama Ouchani, Abdelaziz El Moussaouy, Hassan Aynaou, Youssef El Hassouani, El Houssaine El Boudouti, Bahram Djafari-Rouhani

We investigate theoretically the possibility to control the optical transmission in the visible and infrared regions by a defective one dimensional photonic crystal formed by a combination of a finite isotropic superlattice and an anisotropic defect layer. The Green's function approach has…

Physics Letters A, 2018, 382 (4), pp.231-240. ⟨10.1016/j.physleta.2017.11.020⟩. ⟨hal-03183514⟩

• Article dans une revue

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus, Malek Zegaoui, F Medjdoub

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the…

Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩

• Article dans une revue

Microscale ultrahigh-frequency resonant wireless powering for capacitive and resistive MEMS actuators

Yoshio Mita, Naoyuki Sakamoto, Naoto Usami, Antoine Frappé, Akio Higo, Bruno Stefanelli, Hidehisa Shiomi, Julien Bourgeois, Andreas Kaiser

This paper presents a versatile chip-level wireless driving method for microelectromechanical system (MEMS) actuators. A MEMS actuator is integrated as an electrical component of a coupled LCR resonant circuit, and it rectifies the energy sent through an ultrahigh-frequency (UHF) radio frequency (…

Sensors and Actuators A: Physical , 2018, 275, pp.75-87. ⟨10.1016/j.sna.2018.03.020⟩. ⟨hal-02182815⟩

• Article dans une revue

Wavelength characterization of an acousto-optic notch filter for unpolarized near-infrared light

Jean-Claude Kastelik, Justine Champagne, Samuel Dupont, Konstantin B. Yushkov

A cascaded system of two acousto-optical cells is proposed and experimentally demonstrated for optical notch rejection filtering in the spectral range from 1400 nm to 1600 nm. Two similar paratellurite acousto-optical devices for unpolarized light are used in a free-space gap of a fiber line.…

Applied optics, 2018, 57 (10), pp.C36-C41. ⟨10.1364/AO.57.000C36⟩. ⟨hal-03183486⟩