Publications

• Article dans une revue

Ricean K-factor and SNR estimation for M-PSK modulated signals using the fourth-order cross-moments matrix

I. Bousnina, M.B. Ben Salah, A. Samet, Iyad Dayoub

IEEE Communications Letters, 2012, 16, pp.1236-1239. ⟨10.1109/LCOMM.2012.061912.120708⟩. ⟨hal-00788185⟩

• Communication dans un congrès

Monolithic integration of Ge on SrTiO3 : mismatch accommodation for very heterogeneous epitaxial systems

B. Gobaut, J. Penuelas, A. Danescu, N. Blanc, V. Favre-Nicolin, G. Renaud, J. Wang, I. Lefebvre, G. Saint-Girons

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium M - More than Moore : novel materials approaches for functionalized silicon based microelectronics, 2012, Strasbourg, France. ⟨hal-00797762⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Article dans une revue

Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal

Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier

The square symmetry of the equifrequency contour of longitudinal waves in a solid/solid two-dimensional phononic crystal (PC) is shown through numerical calculations and experiments to lead to peculiar propagation phenomena. A slab of steel/epoxy PC immersed in water refracts incident longitudinal…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩

• Article dans une revue

Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study

V. Mortet, L. Zhang, M. Eckert, J. d'Haen, A. Soltani, M. Moreau, David Troadec, E. Neyts, Jean-Claude de Jaeger, J. Verbeeck, A. Bogaerts, G. van Tendeloo, K. Haenen, P. Wagner

Physica Status Solidi A (applications and materials science), 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩. ⟨hal-00788174⟩