Publications

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Article dans une revue

Ballistic nanodevices for terahertz data processing : Monte Carlo simulations

J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy

Nanotechnology, 2003, 14, pp.117-122. ⟨hal-00145979⟩

• Communication dans un congrès

Double-gate HEMTs on transferred substrate

Nicolas Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2003, pp.118-121. ⟨hal-00145995⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Communication dans un congrès

Non-linear phenomenological model for RF advanced MOSFET

A. Siligaris, Gilles Dambrine, Sylvie Lepilliet, D. Schreurs, Francois Danneville

European IC-CAP User Meeting, 2003, Prague, Czech Republic. ⟨hal-00146016⟩

• Communication dans un congrès

IEMN : a center of the french network for basic research in Micro@Nano technology

A. Cappy

Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. ⟨hal-00146046⟩

• Communication dans un congrès

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• Article dans une revue

Microscopic modeling of nonlinear transport in ballistic nanodevices

J. Mateos, B.G. Vasallo, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905. ⟨hal-00145980⟩

• Communication dans un congrès

Noise modelling of 0.25 µm fully depleted SOI MOSFETs

G. Pailloncy, Gilles Dambrine, Francois Danneville, B. Iniguez, J.P. Raskin

2003, pp.577-580. ⟨hal-00145992⟩

• Communication dans un congrès

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter…

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩