Publications

Affichage de 6101 à 6110 sur 16558


  • Article dans une revue

Antifouling biomimetic liquid-infused stainless steel: application to rairy industrial processing

Sawsen Zouaghi, Thierry Six, Séverine Bellayer, Sona Moradi, Savvas G. Hatzikiriakos, Thomas Dargent, V. Thomy, Yannick Coffinier, Christophe Andre, Guillaume Delaplace, Maude Jimenez

Fouling is a widespread and costly issue, faced by all food-processing industries. Particularly, in the dairy sector, where thermal treatments are mandatory to ensure product safety, heat-induced fouling represents up to 80% of the total production costs. Significant environmental impacts, due the…

ACS Applied Materials & Interfaces, 2017, 9 (31), pp.26565-26573. ⟨10.1021/acsami.7b06709⟩. ⟨hal-02622108⟩

  • Communication dans un congrès

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, M. Fryziel, Nathalie Rolland, Afshin Ziaei

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction.…

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

  • Communication dans un congrès

Wireless monitoring system for lightweight aircraft landing gear

Christophe Delebarre, Sébastien Grondel, Samuel Dupont, F Rouvarel, M Yoshida

Mass repartition onboard lightweight aircraft is a crucial problem as it may generate difficulties for the pilot during the landing phase. Being able for the pilot to land the plane properly is of course an important aspect for safety, but also for structure integrity. So the mass repartition…

18th International Conference on Research and Education in Mechatronics (REM 2017), Sep 2017, Wolfenbuettel, Germany. pp.1-6, ⟨10.1109/REM.2017.8075230⟩. ⟨hal-03549288⟩