Publications
Affichage de 1391 à 1400 sur 16285
[Invited] The Symmetries in the History of Physics: Phenomena and Ideas in Maxwell, Noether and Einstein
Raffaele Pisano
Symmetries in Physics, 19 November 2023, HAPP, St Cross College, University of Oxford, UK, Nov 2023, Mathematical Institute, University of Oxford University, Oxford, United Kingdom. ⟨hal-04518272⟩
Identification of <em>Cryptosporidium parvum</em> IIa and IId zoonotic subtype families and <em>Cryptosporidium bovis</em> from calves in Algeria
Lynda Sahraoui, Mohamed Mammeri, Myriam Thomas, Aurélie Chevillot, Bruno Polack, Isabelle Vallée, Jérôme Follet, Hacina Ain-Baaziz, Karim Tarik Adjou
Inpedance cardiography device
Olev Martens, Anar Abdullayev, Margus Metshein, Antoine Gautier, Antoine Frappe, Andrei Krivodei, Marek Rist, Paul Annus, Benoit Larras, Deepu John, Barry Cardiff
Estonia, Patent n° : EE202200004 (A) 2023-11-15. 2023, pp.N° de demande : EE2022P000004 20220329. ⟨hal-05649980⟩
Devices and circuits for HF applications based on 2D materials
Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, Henri Happy
2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, ⟨10.1109/DCIS58620.2023.10335977⟩. ⟨hal-04396932⟩
Acoustic noise levels and field distribution in 7 T MRI scanners
Louena Shtrepi, Vinicius Poggetto, Clement Durochat, Marc Dubois, David Bendahan, Fabio Nistri, Marco Miniaci, Nicola Maria Pugno, Federico Bosia
Frontiers in Physics, 2023, 11, ⟨10.3389/fphy.2023.1284659⟩. ⟨hal-04302825⟩
Method for producing diode
Pascal Chevalier, Alexis Gauthier, Gregory Avenier
United States, Patent n° : US11817353 (B2) 2023-11-14. flagship_devices. 2023, Numéro de demande: US202217568500 20220104 - Numéro(s) de priorité: FR20190007149 20190628 ; US202016909378 20200623 ; US202217568500 20220104. ⟨hal-05639532⟩
Experimental evidence of nonreciprocal propagation in space-time modulated piezoelectric phononic crystals
S. Tessier Brothelande, C. Croënne, F. Allein, Jerome O. Vasseur, M. Amberg, Frédéric Giraud, Bertrand Dubus
Applied Physics Letters, 2023, 123 (20), pp.201701. ⟨10.1063/5.0169265⟩. ⟨hal-04285080⟩
Dislocation density reduction for vertical GaN devices on 200 mm Si
Ziyao Gao, Youssef Hamdaoui, Idriss Abid, F Medjdoub, Elke Meissner, Sven Besendörfer, Michael Heuken
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436407⟩
Refractive Index Modification in Thin Film Barium Titanate-on-Insulator and Dry Etch Free Fabrication of Waveguide Devices
Yu Cao, Hong-Lin Lin, Haidong Liang, Andrew Bettiol, El Hadj Dogheche, Aaron Danner
2023 IEEE Photonics Conference (IPC), Nov 2023, Orlando, United States. pp.1-2, ⟨10.1109/IPC57732.2023.10360613⟩. ⟨hal-04419271⟩
Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects
Kathia Harrouche, Lyes Ben-Hammou, François Grandpierron, Ajay Shanbhag, Etienne Okada, F Medjdoub
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436421⟩