Publications

Affichage de 2741 à 2750 sur 16288


  • Article dans une revue

Wafer-level vapor cells filled with laser-actuated hermetic seals for integrated atomic devices

Vincent Maurice, Clément Carlé, Shervin Keshavarzi, Ravinder Kumar Chutani, Samuel Queste, Ludovic Gauthier-Manuel, Jean-Marc Cote, Rémy Vicarini, Moustafa Abdel Hafiz, Rodolphe Boudot, Nicolas Passilly

Atomic devices such as atomic clocks and optically-pumped magnetometers rely on the interrogation of atoms contained in a cell whose inner content has to meet high standards of purity and accuracy. Glass-blowing techniques and craftsmanship have evolved over many decades to achieve such standards…

Microsystems & Nanoengineering, 2022, 8 (129), pp.13. ⟨10.1038/s41378-022-00468-x⟩. ⟨hal-04224417⟩

  • Article dans une revue

The out-of-field dose in radiation therapy induces delayed tumorigenesis by senescence evasion

Erwan Goy, Maxime Tomezak, Caterina Facchin, Nathalie Martin, Emmanuel Bouchaert, Jerome Benoit, Clementine de Schutter, Joe Nassour, Laure Saas, Claire Drullion, Priscille Brodin, Alexandre Vandeputte, Olivier Molendi-Coste, Laurent Pineau, Gautier Goormachtigh, Olivier Pluquet, Albin Pourtier, Fabrizio Cleri, Eric Lartigau, Nicolas Penel, Corinne Abbadie

A rare but severe complication of curative-intent radiation therapy is the induction of second primary cancers. These cancers preferentially develop not inside the planning target volume (PTV) but around, over several centimeters, after a latency period of 1–40 years. We show here that normal human…

eLife, 2022, 11 (e67190), ⟨10.7554/eLife.67190⟩. ⟨hal-03613878⟩

  • Article dans une revue

Transport Properties of Methyl-Terminated Germanane Microcrystallites

Davide Sciacca, Maxime Berthe, Bradley Ryan, Nemanja Peric, D. Deresmes, Louis Biadala, Christophe Boyaval, Ahmed Addad, Ophélie Lancry, Raghda Makarem, Sébastien Legendre, Didier Hocrelle, Matthew Panthani, Geoffroy Prévot, Emmanuel Lhuillier, Pascale Diener, B. Grandidier

Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and…

Nanomaterials, 2022, 12 (7), pp.1128. ⟨10.3390/nano12071128⟩. ⟨hal-03634314⟩

  • Communication dans un congrès

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Pierre Ruterana, Marie Pierre Chauvat, Magali Morales, Farid Medjdoub, Piero Gamarra, Christian Dua, Sylvain Delage

In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2…

ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩. ⟨hal-03930667⟩

  • Communication dans un congrès

Molecular beam epitaxial growth of 2D-boron nitride on Ni substrates

Jawad Hadid, Ivy Colambo, Jose Avila, Aexandre Plaud, Christophe Boyaval, D. Deresmes, Nicolas Nuns, Pavel Dudin, Annick Loiseau, Julien Barjon, Xavier Wallart, Dominique Vignaud

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. Based on spatially resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of…

22nd International Conference on Molecualr Beam Epitaxy, University of Sheffield (UK), Sep 2022, Sheffield, United Kingdom. ⟨hal-04438264⟩