Publications

• Article dans une revue

Structural health monitoring of hollow cylinder using cross-correlation of ambient noise field

Sonia Djili, Emmanuel Moulin, Jamal Assaad, Malika Toubal, Farouk Benmeddour

This work is devoted to the Structural Health Monitoring (SHM) of hollow cylinders. To this end, the generated noise by fluid flow (liquid or gas) is exploited. First, a one-dimensional theoretical model is developed. This is based on the cross-correlation function. It is shown that the latter…

NDT & E International, 2019, 101, pp.87-93. ⟨10.1016/j.ndteint.2018.10.003⟩. ⟨hal-03148969⟩

• Article dans une revue

Accuracy of Green's function estimation from correlation of diffuse elastic waves on thin plates

Lynda Chehami, Emmanuel Moulin, Julien de Rosny, Claire Prada

In a reverberant cavity, when a noise field is sufficiently diffuse, the correlation of the signal measured by two sensors provides an estimation of the Green's function (GF) between them. Here, the convergence of this passive estimation in the case of elastic waves on thin plates is studied.…

Journal of the Acoustical Society of America, 2019, 146 (5), pp.3505-3511. ⟨10.1121/1.5134066⟩. ⟨hal-02382833⟩

• Communication dans un congrès

Texturation of lead-free BaTiO₃ based piezoelectric ceramics

Pascal Marchet, Angel Prato, Franck Levassort, Claire Bantignies, Maï Pham-Thi, Ana Borta-Boyon, Anne-Christine Hladky

• Communication dans un congrès

Indoor 1-40 GHz channel measurements

Maria-Teresa Martinez-Ingles, Juan Pascual-Garcia, Davy Gaillot, Concepcion Borras, Jose-Maria Molina-Garcia-Pardo

13th European Conference on Antennas and Propagation, EuCAP 2019, Mar 2019, Krakow, Poland. pp.295-299. ⟨hal-03346228⟩

• Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• Communication dans un congrès

Enlarging the Frontiers of Research in the IR/mm Range Using Synchrotron Radiation

J-B. Brubach, B. Langerome, M. Verseils, F. Capitani, T. Souske, Jean-Francois Lampin, S. Eliet, O. Pirali, M. A. Martin-Drumel, Francis Hindle, Gaël Mouret, C. Evain, C Szwaj, E. Roussel, S. Bielawski, T. Timusk, Pascale Roy

Optical probes are among the most important techniques for characterizing new physical states induced by changes of temperature and/or pressure. In link with its high brightness and wide spectral coverage, infrared synchrotron radiation is ideally suited for such studies when the quantity of…

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873937⟩. ⟨hal-04295283⟩

• Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

• Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

• Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩

• Communication dans un congrès

Six-port technology for millimeter-wave metrology

Kamel Haddadi, Christophe Loyez, Katir Ziouche

The six-port measurement technique has played a major role in vector network analysis metrology, particularly within the community of national standards laboratories. Thanks to reduced hardware resource in contrast with conventional and well-established down-mixing heterodyne technique, this paper…

6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩