Publications

Affichage de 7011 à 7020 sur 16307


  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Communication dans un congrès

Développement de matériaux hybrides par voie sol-gel limitant l'endommagement laser

F. Compoint, C. Ambard, H. Piombini, P. Belleville, K. Valle, Carmen Navarro Sanchez, P. Ruello, Marc Duquennoy

Journées SOL-GEL 2014, 2014, Tours, France. ⟨hal-00996834⟩

  • Communication dans un congrès

Epitaxial growth of MgO tunnel barrier on epitaxial graphene

Florian Godel, Emmanuelle Pichonat, Dominique Vignaud, Hicham Majjad, Dominik Metten, Yves Henry, Stéphane Berciaud, Jean-François Dayen, David Halley

7th CNRS-EWHA Winter School 2014, 2014, Strasbourg, France. ⟨hal-01055000⟩

  • Communication dans un congrès

Correlative light atomic force electron microscopy (CLAFEM) : imagerie d'organites et de micro-organismes intracellulaires

Michka Popoff, Sébastien Janel, Nicolas Barois, Antonino Bongiovanni, Elisabeth Werkmeister, Frank Lafont

17ème Forum des Microscopies à Sonde Locale, 2014, Montauban, France. session 11, papier 41, 108-109. ⟨hal-01005713⟩

  • Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

  • Article dans une revue

Ultrawide-bandwidth single-channel 0.4-THz wireless link combining broadband quasi-optic photomixer and coherent detection

Guillaume Ducournau, P. Szriftgiser, Alexandre Beck, Denis Bacquet, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Tahsin Akalin, Jean-Francois Lampin

Free space communications with huge data capacity have become a key point for the development of mobile access, services, and network technologies convergence. Wireless links using emerging terahertz technologies, also referred to as T-ray communications, have become an intensive research field…

IEEE Transactions on Terahertz Science and Technology, 2014, 4, pp.328-337. ⟨10.1109/TTHZ.2014.2309006⟩. ⟨hal-00987955⟩

  • Communication dans un congrès

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

Ali Soltani, Abdelkrim Talbi, J-C Gerbedoen, Jean-Claude de Jaeger, Philippe Pernod, V. Mortet, A. Bassam

In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth…

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. pp.2047-2050, ⟨10.1109/ULTSYM.2014.0510⟩. ⟨hal-03276910⟩