Publications

Affichage de 7051 à 7060 sur 16434


  • Article dans une revue

Silicon-microtube scaffold decorated with anatase TiO2 as a negative electrode for a 3D litium-ion microbattery

Etienne Eustache, Pascal Tilmant, Laurence Morgenroth, Pascal Roussel, Gilles Patriarche, David Troadec, Nathalie Rolland, Thierry Brousse, Christophe Lethien

An optimized scaffold based on silicon microtubes is designed to increase the surface capacity of 3D lithium-ion microbatteries. High-depth, mechanically robust microstructures are fabricated using microelectronic facilities. Conformal deposition of anatase TiO2 is achieved using atomic layer…

Advanced Energy Materials, 2014, 4, 1301612, 11 p. ⟨10.1002/aenm.201301612⟩. ⟨hal-00999999⟩

  • Article dans une revue

Ultralow-phase-noise oscillators based on BAW resonators

Mingdong Li, Seonho Seok, Nathalie Rolland, Paul-Alain Rolland, Hassan El Aabbaoui, Emeric de Foucauld, Pierre Vincent, Vincent Giordano

This paper presents two 2.1-GHz low-phase noise oscillators based on BAW resonators. Both a single-ended common base structure and a differential Colpitts structure have been implemented in a 0.25-μm BiCMOS process. The detailed design methods including the realization, optimization, and test are…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2014, 61, pp.903-912. ⟨10.1109/TUFFC.2014.2986⟩. ⟨hal-00996831⟩

  • Communication dans un congrès

Organic synapstor for unconventional computing and biocompatible applications

Dominique Vuillaume

21st Korean Conference on Semiconductors, KCS 2014, International Symposium on Next Generation Terabit Memory Technology, 2014, Seoul, South Korea. ⟨hal-00957813⟩

  • Article dans une revue

Terahertz wireless communication using GaAs transistors as detectors

L. Tohme, S. Blin, Guillaume Ducournau, P. Nouvel, D. Coquillat, S. Hisatake, T. Nagatsuma, A. Pénarier, L. Varani, W. Knap, Jean-Francois Lampin

The detection of high data-rate wireless communication using a terahertz- frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error-free transmission at data rates up to 8.2 Gbit/s is demonstrated,…

Electronics Letters, 2014, 50, pp.323-325. ⟨10.1049/el.2013.3702⟩. ⟨hal-00954475⟩