Publications

Affichage de 7191 à 7200 sur 16442


  • Communication dans un congrès

Atomic switch : synaptic functionalities and integration strategies

Selina La Barbera, David Guérin, Dominique Vuillaume, F. Alibart

In recent years, research in the field of neuro-inspired computing has generated a lot of interest and seems to be a promising candidate to complement and to provide enhanced performances and new functionalities to the existing CMOS/Von Neumann processor, such as image recognition or datas…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium S - Memristormaterials, mechanisms and devices for unconventional computing, 2014, Lille, France. ⟨hal-00957801⟩

  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

  • Chapitre d'ouvrage

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic

Emmanuel Dubois, Aurelien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Yoann Tagro, Francois Danneville, J.F. Robillard, Christine Raynaud, Daniel Gloria, Jacek Ratajczak

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'. Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014. ⟨hal-04249256⟩

  • Communication dans un congrès

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, B. Grandidier

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of…

SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩. ⟨hal-00974539⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'.…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩