Publications

Affichage de 7281 à 7290 sur 16308


  • Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩

  • Article dans une revue

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Ali Soltani, Arnaud Stolz, Joël Charrier, Maghnia Mattalah, Jean-Claude Gerbedoen, Hassan Ali Barkad, Vincent Mortet, Michel Rousseau, Nour Eddine Bourzgui, Ali Benmoussa, Jean-Claude de Jaeger

Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent…

Journal of Applied Physics, 2014, 115 (16), pp.163515. ⟨10.1063/1.4873236⟩. ⟨hal-00987345⟩

  • Article dans une revue

Electrical properties of lead-free KNN films on SRO/STO by RF magnetron sputtering

T. Li, G.S. Wang, K. Li, G. Du, Y. Chen, Z.Y. Zhou, Denis Remiens, X.L. Dong

Ceramics International, 2014, 40, pp.1195-1198. ⟨10.1016/j.ceramint.2013.07.005⟩. ⟨hal-00903762⟩