Publications

• Article dans une revue

Microwave insulation optimization of photoswitches consisting of a coplanar line introducing a single-electrode MSM photodetector

M. El Besseghi, Abdelkader Aissat, Didier Decoster

International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering, 2013, 2, pp.4635-4641. ⟨hal-00877638⟩

• Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

• Article dans une revue

Irradiation damage tests on backside-illuminated CMOS APS prototypes for the extreme ultraviolet imager on-board solar orbiter

A. Benmoussa, S. Gissot, B. Giordanengo, G. Meynants, X. Wang, B. Wolfs, J. Bogaerts, U. Schuhle, G. Berger, A. Gottwald, C. Laubis, U. Kroth, F. Scholze, A. Soltani, T. Saito

IEEE Transactions on Nuclear Science, 2013, 60, pp.3907-3914. ⟨10.1109/TNS.2013.2279550⟩. ⟨hal-00877648⟩

• Article dans une revue

Fabrication of silicon nanostructures using metal-assisted etching in NaBF4

N.T.P. Nguyen, Yannick Coffinier, V. Thomy, Rabah Boukherroub

Physica Status Solidi A (applications and materials science), 2013, 210, pp.2178-2182. ⟨10.1002/pssa.201330035⟩. ⟨hal-00877646⟩

• Article dans une revue

High surface capacity Li-ion all solid state 3D microbattery based on anatase TiO2 deposited by ALD on silicon microstructures

E. Eustache, P. Tilmant, L. Morgenroth, P. Roussel, N. Rolland, Thierry Brousse, C. Lethien

ECS Transactions, 2013, 58, pp.119-129. ⟨10.1149/05810.0119ecst⟩. ⟨hal-00877701⟩

• Article dans une revue

Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be…

Materials Science in Semiconductor Processing, 2013, 16, pp.1936-1942. ⟨10.1016/j.mssp.2013.07.021⟩. ⟨hal-00871946⟩

• Communication dans un congrès

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

Stéphanie Rennesson, M. Chmielowska, S. Chenot, Yvon Cordier, François Lecourt, N. Defrance, Marie Lesecq, Virginie Hoel, Etienne Okada, Jean-Claude de Jaeger

10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States. ⟨hal-00987956⟩

• Communication dans un congrès

Silicon nanotweezers with a microfluidic cavity for the real time characterization of DNA damage under therapeutic radiation beams

G. Perret, P.T. Chiang, T. Lacornerie, M. Kumemura, N. Lafitte, Hervé Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2013, 2013, Osaka, Japan. paper SuA07.2, 6820-6820. ⟨hal-00909944⟩

• Communication dans un congrès

Présentation de l'école sur les métamatériaux et l'ouvrage qui en est issu

Eric Lheurette

Assemblée Générale du GdR Ondes 2451 " Interférences d'ondes ", 2013, Dijon, France. ⟨hal-00879915⟩

• Communication dans un congrès

Interactions optomécaniques dans les cavités phoxoniques

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani

Assemblée Générale du GdR Ondes 2451 " Interférences d'ondes ", 2013, Dijon, France. papier A48, 2 p. ⟨hal-00879925⟩