Publications

• Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩

• Article dans une revue

Acoustic techniques for concrete evaluation: improvements, comparisons and consistency

Vincent Garnier, Bogdan Piwakowski, Odile Abraham, Géraldine Villain, Cédric Payan, Jean François Chaix

In civil engineering, the testing of structures allows a large number of chemical, mechanical and micro–macro structural parameters to be determined. Within the scope of ultrasonic Non-Destructive Testing (NDT), which is often used to evaluate concrete, many different techniques can be employed to…

Construction and Building Materials, 2013, 43, pp.598-613. ⟨10.1016/j.conbuildmat.2013.01.035⟩. ⟨hal-00813152⟩

• Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

• Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

• Article dans une revue

Addition of HfO$_2$ interface layer for improved synaptic performance of phase change memory (PCM) devices

M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we will focus on the use of phase change memory (PCM) to emulate synaptic behavior in emerging neuromorphic system-architectures. In particular, we will show that the performance and energy-efficiency of large scale neuromorphic systems can be improved by engineering individual PCM…

Solid-State Electronics, 2013, 79, pp.227-232. ⟨10.1016/j.sse.2012.09.006⟩. ⟨hal-00795982⟩

• Article dans une revue

Mixed metallic Ba(Co,Mn)X0.2-xO3-δ (X=F, Cl) hexagonal perovskites

M. Iorgulescu, P. Roussel, N. Tancret, N. Renaut, Nicolas Tiercelin, O. Mentre

Journal of Solid State Chemistry, 2013, 198, pp.210-217. ⟨10.1016/j.jssc.2012.09.040⟩. ⟨hal-00796408⟩

• Article dans une revue

A crown-ether loop-derivatized oligothiophene doubly attached on gold surface as cation-binding switchable molecular junction

T.K. Tran, K. Smaali, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, S. Lenfant, S. Godey, J. Roncali, D. Vuillaume

A crown-ether dithiol quaterthiophene is synthesized and immobilized on gold surface by double covalent fixation. UV-vis spectroscopy and cyclic voltammetry show that the corresponding dithioester precursor can complex Pb2+ in solution and that this property is maintained for monolayers of the…

Advanced Materials, 2013, 25, pp.427-431. ⟨10.1002/adma.201201668⟩. ⟨hal-00796399⟩

• Communication dans un congrès

Ajout d'un recuit dédié à la réduction de la résistance extrinsèque de base dans les TBH SiGe:C DPSA-SEG

Elodie Canderle

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957780⟩

• Communication dans un congrès

Caractérisation et modélisation en petit signal de transistor bipolaire à hétérojonction Si/SiGe:C jusqu'à 220 GHz

Marina Deng

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957773⟩

• Article dans une revue

AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

S. Bouzid-Driad, H. Maher, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Renvoise, P. Frijlink

IEEE Electron Device Letters, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩. ⟨hal-00796433⟩