Publications

• Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by photomixing : coupling a unitravelling carrier photodiode and a two-axis dual-frequency laser

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Emilien Peytavit, Alexandre Beck, Tahsin Akalin, Mohamed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, M. Alouini

Conference on Lasers and Electro-Optics, CLEO 2012, Laser Science to Photonic Applications, 2012, San Jose, CA, United States. paper CTu1B.3, 1-2. ⟨hal-00803101⟩

• Communication dans un congrès

Optimization of electrodes design for PZT thin-film actuated membranes

F. Casset, H. Michaud, T. Ricart, G. Le Rhun, M. Cueff, J. Abergel, P. Ancey, D. Faralli, Arnaud Devos, S. Fanget, E. Defay

This paper reports on the optimization of electrodes design for sol-gel Pb(Zr0.52, Ti0.48)O3 (PZT) thin-film actuated-membranes. PZT can be used in many actuator applications such as micro mirror, RF MEMS, inkjet or loudspeaker due to its strong piezoelectric properties. We aim to design membrane…

26th European Conference on Solid-State Transducers, Eurosensors XXVI, Sep 2012, Kraków, Poland. pp.108-111, ⟨10.1016/j.proeng.2012.09.096⟩. ⟨hal-00801141⟩

• Communication dans un congrès

Hystérésis sur surfaces superomniphobes

Renaud Dufour, Philippe Brunet, Maxime Harnois, Rabah Boukherroub, Vincent Thomy, Vincent Senez

Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France. ⟨hal-00798843⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Article dans une revue

Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal

Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier

The square symmetry of the equifrequency contour of longitudinal waves in a solid/solid two-dimensional phononic crystal (PC) is shown through numerical calculations and experiments to lead to peculiar propagation phenomena. A slab of steel/epoxy PC immersed in water refracts incident longitudinal…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩