Publications

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Acousto-optic interaction in photonic and phononic crystals for improved efficiency

Quentin Rolland, Samuel Dupont, D. Yudistira, Joseph Gazalet, Jean-Claude Kastelik, Yan Pennec

5th International Symposium on Optronics in Defence and Security, OPTRO 2012, 2012, Paris, France. pp.Emerging Technologies II, S05_08, OPTRO-2012-095, 1-7. ⟨hal-00801112⟩

• Proceedings/Recueil des communications

Historical Reflections on the Scale Ratio in the Galilean Trattato di Fortificazione

Raffaele Pisano, Danilo Capecchi

Proceedings of Explorations in the History of Machines and Mechanisms, 15, Springer Netherlands, pp.463-473, 2012, History of Mechanism and Machine Science, 978-94-007-4132-4. ⟨10.1007/978-94-007-4132-4_32⟩. ⟨hal-04513887⟩

• Communication dans un congrès

Microstrip EBG structures for millimeter-wave range with a broadband coplanar waveguide to microstrip transition

Magdalena Chudzik, Abbas Ghaddar, Israel Arnedo, Aintzane Lujambio, Ivan Arregui, Fernando Teberio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820993⟩

• Communication dans un congrès

Intelligent transports systems based on UWB technologies

Fouzia Boukour, Atika Rivenq

Ultra Wide Band (UWB) may offer very efficient solutions for various communication and localisation transport applications. We propose to use this technique to establish communication vehicle- to- vehicle and vehicle- to-infrastructure. In fact, compared to traditional carrier-based, Ultra-Wide…

IEEE European Wireless Conference, Sep 2012, Poland. 5p. ⟨hal-01068408⟩

• Communication dans un congrès

Throughput maximization approach for O-MIMO systems using MGDM technique

M. Awad, W. Hamouda, Iyad Dayoub

IEEE Global Communications Conference, GLOBECOM 2012, 2012, Anaheim, CA, United States. pp.2953-2958, ⟨10.1109/GLOCOM.2012.6503566⟩. ⟨hal-00820960⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Communication dans un congrès

Evaluación experimental de la técnica time-reversal para sistemas de gran ancho de banda en túneles

Concepcion Garcia Pardo, M. Lienard, Pierre Degauque, Jose Maria Molina Garcia-Pardo, Leandro Juan Llacer

XXVII Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2012, 2012, Elche, España. pp.75-77. ⟨hal-00994829⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩