Publications

• Communication dans un congrès

Molecule/electrode interface energetics in nanocontact molecular junction : a ''transition voltage spectroscopy'' study

G. Ricoeur, S. Lenfant, David Guérin, D. Vuillaume

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00797683⟩

• Communication dans un congrès

Interference and digital communications (turbo codes, cooperation)

W. Gu, Laurent Clavier

Workshop on Mathematical Models for Impulsiveness : Alpha-Stable Processes for Signal Processing and Communications, 2012, Villeneuve d'Ascq, France. ⟨hal-00797335⟩

• Communication dans un congrès

Graphene growth and synthesis

D. Vignaud

European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, 2012, Amsterdam, Netherlands. ⟨hal-00797341⟩

• Communication dans un congrès

Tunability of one-dimensional piezoelectric or piezomagnetic phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham-Thi

IEEE International Ultrasonics Symposium, IUS 2012, 2012, Dresden, Germany. ⟨hal-00797275⟩

• Communication dans un congrès

Dispositifs à base de graphène

H. Happy

Journée Nanoélectronique du club EEA, 2012, Orsay, France. ⟨hal-00797281⟩

• Autre publication scientifique

Développement d'un outil de caractérisation millimétrique de bruit dans la bande de fréquences 110-320 GHz

Laurent Poulain

2012. ⟨hal-00799267⟩

• Communication dans un congrès

Room temperature process for direct writing of nanostructures on plastic

V. Passi, A. Lecavelier Des Etangs-Levallois, Z.K. Chen, François Morini, Emmanuel Dubois

38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797783⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Holistic modelling of heterogeneous embedded systems with high multi-discipline feedback : application to a precollision mitigation braking system

A. Leveque, François Pecheux, M.M. Louerat, H. Aboushady, F. Cenni, S. Scotti, A. Massouri, Laurent Clavier

Design, Automation & Test in Europe, DATE 2012, 2012, Dresden, Germany. pp.739-744. ⟨hal-00801059⟩

• Communication dans un congrès

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs…

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩