Publications

Affichage de 8931 à 8940 sur 16309


  • Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

  • Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

  • Communication dans un congrès

120nm AlSb/InAs HEMTs

Yannick Roelens, A. Olivier, A. Noudeviwa, L. Desplanque, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4. ⟨hal-00591362⟩

  • Communication dans un congrès

Growth of self-catalyzed GaAs nanowire arrays on Si(111) using a VLS mechanism

S.R. Plissard, G. Larrieu, K.A. Dick, X. Wallart, P. Caroff

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591395⟩

  • Communication dans un congrès

Atom probe investigation of silicon nanowires grown by VLS and IPSLS

W. M. Chen, P. Pareige, B. Grandidier, D. Stievenard, Lianbo Yu, Pere Roca I Cabarrocas

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591402⟩

  • Communication dans un congrès

Nanowires and nanocones for new nanostructured materials

D. Hourlier, P. Perrot

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591389⟩

  • Communication dans un congrès

[Invited] On-wafer S-parameters and noise measurements from D to J-band

N. Waldhoff

European Microwave Week, EuMIC/EuMC, Workshop W10 - From de-embedding to waveform engineering, 2011, Manchester, United Kingdom. ⟨hal-00807123⟩

  • Communication dans un congrès

Polytypism in III-V nanowires

S. Lehmann, K.A. Dick, J. Johansson, P. Caroff, J. Bolinsson, M.E. Messing, D. Jacobsson, K. Deppert, L. Samuelson

3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2011, 2011, Traunkirchen, Austria. ⟨hal-00807148⟩

  • Communication dans un congrès

Band-gap operating in the gigahertz frequencies for a bi-layer phononic crystal slab

Abdelkrim Talbi, A. Soltani, Y. El Hassouani, Yan Pennec, Bahram Djafari-Rouhani, Abdellatif Akjouj

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, NM, United States. ⟨hal-00807176⟩