Publications

• Communication dans un congrès

LEMFN protocol for prolonging the lifetime of wireless clustered ad hoc networks

A. Abusaif, Jean-Michel Rouvaen, Yassin El Hillali

2nd International Conference on Multimedia Computing and Systems, ICMCS'11, 2011, Ouarzazate, Morocco. ⟨hal-00807616⟩

• Communication dans un congrès

[Invité] Microfluidique : déplacement et mélange de gouttes

V. Thomy

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807635⟩

• Article dans une revue

Influence of cold remote nitrogen oxygen plasma treatment on carbon fabric and its composites with specialty polymers

S. Tiwari, M. Sharma, S. Panier, B. Mutel, P. Mitschang, J. Bijwe

Journal of Materials Science, 2011, 46, pp.964-974. ⟨10.1007/s10853-010-4847-z⟩. ⟨hal-00572655⟩

• Article dans une revue

Negative refraction of elastic waves in 2D phononic crystals : contribution of resonant transmissions to the construction of the image of a point source

Anne-Christine Hladky, Charles Croënne, Bertrand Dubus, Jerome O. Vasseur, L. Haumesser, D. Manga, B. Morvan

Negative refraction properties of a two-dimensional phononic crystal (PC), made of a triangular lattice of steel rods embedded in epoxy are investigated both experimentally and numerically. First, experiments have been carried out on a prism shaped PC immersed in water. Then, for focusing purposes…

AIP Advances, 2011, 1 (4), pp.0414054. ⟨10.1063/1.3676177⟩. ⟨hal-00783381⟩

• Article dans une revue

Band gaps and waveguiding in phoxonic silicon crystal slabs

Yan Pennec, Bahram Djafari-Rouhani, E.H. El Boudouti, C. Li, Y. El Hassouani, Jerome O. Vasseur, N. Papanikolaou, S. Benchabane, V. Laude, A. Martinez

Chinese Journal of Physics, 2011, 49, pp.100-110. ⟨hal-00579069⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman…

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the…

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were…

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Surface passivation effects on AlGaN/GaN high electron mobility transistors with SiO2

M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2175-2177. ⟨10.1166/sl.2011.1787⟩. ⟨hal-00795918⟩

• Article dans une revue

Compliance at the GaSb/GaP interface by misfit dislocations array

S. El Kazzi, L. Desplanque, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart

Advanced Materials Research, 2011, 324, pp.85-88. ⟨10.4028/www.scientific.net/AMR.324.85⟩. ⟨hal-00795909⟩