Publications

Affichage de 2411 à 2420 sur 15025


  • Communication dans un congrès

Simulation and Optimization of Cds/ZnSnN2 Structure for Solar Cell Applications with SCAPS-1D Software

Abdelmoumene Laidouci, Abdelkader Aissat, Jean-Pierre Vilcot

In this paper, we are interested in simulating and modeling of Cds/ZnSnN2 structure for a solar cell using SCAPS-1D. The ZnSnN2 is considered as one of the promising absorber materials for photovoltaic application due to the high optical efficiency and the low cost. In the present work, we have…

2nd International Conference on Electronic Engineering and Renewable Energy Systems, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.211-222, ⟨10.1007/978-981-15-6259-4_21⟩. ⟨hal-03043563⟩

  • Communication dans un congrès

Theoretical modeling and optimization of GaAsPN/GaAs tandem dual-junction solar cells

Ahmed Bahi Azzououm, Abdelkader Aissat, Jean-Pierre Vilcot

This paper presents an optimization and simulation of optical and electrical properties of GaAsPN/GaAs tandem Dual-Junction solar cells such as current density-voltage (J-V), external quantum efficiency (EQE), with an AM1.5 solar spectrum. We comparing the simulated performance of various N…

International Conference on Electronic Engineering and Renewable Energy, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.333-338, ⟨10.1007/978-981-15-6259-4_35⟩. ⟨hal-03043571⟩

  • Chapitre d'ouvrage

GaN-based HEMTs for mm-wave applications

Kathia Harrouche, F Medjdoub

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩

  • Communication dans un congrès

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and robustness for the thinner barrier layer attributed to the reduced mechanical…

IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩

  • Communication dans un congrès

Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz

Victor Fiorese, Cybelle Belem-Gonçalves, Carlos del Rio, Diane Titz, Frédéric Gianesello, Cyril Luxey, Guillaume Ducournau, Emmanuel Dubois, Christophe Gaquière, Daniel Gloria

In this paper, we propose an assessment up to 325 GHz of Micro Laser Sintering (MLS) metal 3D-Printing technology in order to achieve lightweight and cost-effective millimeter wave (mmW) passive function. We first designed and manufactured a bended WR5 waveguide in order to assess achievable…

IEEE/MTT-S International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles, United States. pp.1168-1171, ⟨10.1109/IMS30576.2020.9224102⟩. ⟨hal-03091222⟩

  • Article dans une revue

Vertical multilayer structures based on porous silicon layers for mid-infrared applications

Warda Raiah, Yannick Coffinier, V. Thomy, Maxime Duris, Mohammed Guendouz, Nathalie Lorrain, Parastesh Pirasteh, Loïc Bodiou, Joël Charrier

In this work, the fabrication of a porous silicon Bragg reflector and vertical cavity on P+ silicon substrate is investigated for applications in spectroscopic sensing in the mid-infrared (Mid-IR) wavelength range. The complex refractive index of porous silicon layers is measured. Optical vertical…

Optical Materials Express, 2020, 10 (8), pp.1921-1930. ⟨10.1364/OME.396343⟩. ⟨hal-03043784⟩