Publications

• Communication dans un congrès

Detection of dimethyl methylphosphonate (DMMP), a Sarin simulant, by FT-IR and SALDI-MS on decorated porous silicon layer

Warda Raiah, Mohammed Guendouz, Joël Charrier, V. Thomy, Yannick Coffinier

Journées SCOPe 2019, Jun 2019, Paris, France. ⟨hal-02431521⟩

• Communication dans un congrès

3D patterning of Si by contact etchning: contribution of the band bending modeling

Sylvain Le Gall, Raphaël Lachaume, Encarnacion Torralba, Christine Cachet-Vivier, Stéphane Bastide, Mathieu Halbwax, Vincent Magnin, Joseph Harari, Jean-Pierre Vilcot

Semi-Conducteurs et Oxydes Poreux, 5ème journée (SCOPE 2019), Jun 2019, Thiais, France. ⟨hal-02418947⟩

• Communication dans un congrès

Terahertz photoacoustic gas sensor

Elias Akiki, Mattias Verstuyft, Guillaume Ducournau, Estelle Mairiaux, Benjamin Walter, Marc Faucher, Jean-Francois Lampin, Mathias Vanwolleghem, Bart Kuyken

The concept and the design of an integrated THz photoacoustic gas sensor, on a silicon chip is represented. Ultra-low losses of a Si waveguide and high Q optical cavity are measured and validate the optical part of this sensor.

GDR NanoTeraMIR annual days, Jun 2019, Saint Raphaël, France. ⟨hal-02409703⟩

• Autre publication scientifique

[Séminaire] Rétine artificielle: approche biomimétique ultra efficace en énergie

Virginie Hoel

3ème Séminaire humAIn « Intelligence Artificielle et Santé »,17 juin, 2019. ⟨hal-03341037⟩

• Communication dans un congrès

Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate

M.R. Irekti, Marie Lesecq, N. Defrance, M. Boucherta, Eric Frayssinet, Yvon Cordier, J.G. Tartarin, Jean-Claude de Jaeger

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-04039402⟩

• Communication dans un congrès

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Matteo Borga, Matteo Meneghini, Davide Benazzi, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

In this work an extensive analysis on the leakage current of three samples obtained by stopping the epitaxial growth of a GaN-on-Silicon stack is presented. We studied the current leakage behavior and the breakdown voltage as a function of the ambient temperature, as well as the trapping phenomena…

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356883⟩

• Communication dans un congrès

Scaling of AlN/GaN HEMT for millimeter-wave power applications

K. Harrouche, Riad Kabouche, Malek Zegaoui, F Medjdoub

In this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical characteristics of this structure for 110 nm gate length show a…

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356889⟩

• Communication dans un congrès

AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer

Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, Yvon Cordier, F Medjdoub

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩

• Communication dans un congrès

MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet, Luan Nguyen, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Rémi Comyn, Thi Huong Ngo, Marcin Zielinski, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic…

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-04038786⟩

• Thèse

Artificially induced anisotropy of thermal conductivity in 2D Si phononic membranes, Anisotropie de la conductivité thermique artificiellement induite dans des membranes phononiques en silicium

Stanislav Didenko

This thesis work is devoted to the development of practical mechanisms for the heat guiding in silicon low-dimensional nanostructures. The motivation comes from both the field of IC thermal management and emerging technology of Si-based thermoelectric devices, where directional heat guiding can…, Ce travail de thèse est consacré au développement de mécanismes pratiques pour le guidage de chaleur dans des nanostructures de silicium de faible dimension. Les applications vont du domaine de la gestion thermique des circuits intégrés aux technologies et matériaux thermoélectriques émergents à…

Micro and nanotechnologies/Microelectronics. Université de Lille, 2019. English. ⟨NNT : 2019LILUI048⟩. ⟨tel-03622454⟩