Publications

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

Z. Bougrioua, J. Farvacque, D. Ferre

This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through the potential associated with their linear electric charge and not with…

Journal of Applied Physics, 1996, 79 (3), pp.1536-1545. ⟨10.1063/1.360997⟩. ⟨hal-02415041⟩

• Article dans une revue

Electronic dielectric response of composite materials: application to two-dimensional electronic transport

J.-L Farvacque, Z. Bougrioua

We derive the formal expression for the dielectric response of composite semiconducting materials and then show that the inverse dielectric function can be approximately deduced in the particular case of a two-dimensional electron gas (2DEG) embedded between two media. In given situations, these…

Semiconductor Science and Technology, 1994, 9 (7), pp.1324-1331. ⟨10.1088/0268-1242/9/7/005⟩. ⟨hal-02906467⟩

• Article dans une revue

Dislocations and quantum transport: a possible hint for one-dimensional conductivity along dislocation lines; a fundamental mechanism for the EBIC contrast formation

Z. Bougrioua, D. Ferré, J.L. Farvacque

Materials Science and Engineering: B, 1994, 24 (1-3), pp.82-86. ⟨10.1016/0921-5107(94)90303-4⟩. ⟨hal-02906464⟩