Publications

Affichage de 21 à 30 sur 103


  • Article dans une revue

The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

L. Dobos, L. Toth, B. Pecz, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Microelectronic Engineering, 2012, 90, pp.118-120. ⟨10.1016/j.mee.2011.05.011⟩. ⟨hal-00790434⟩

  • Article dans une revue

Unpackaged infrared thermoelectric microsensor realized on suspended membrane by silicon technology

C. Sion, P. Godts, K. Ziouche, Z. Bougrioua, T. Lasri, D. Leclercq

Sensors and Actuators A: Physical , 2012, 175, pp.78-86. ⟨10.1016/j.sna.2011.12.051⟩. ⟨hal-00788268⟩

  • Article dans une revue

Bilayer Cr/Au contacts on n-GaN

L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩

  • Article dans une revue

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidou, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, T.D. Moustakas

The effect of Fe and Si doping in GaN grown epitaxially on Al2O3 is studied using Extended X-ray Absorption Fine Structure (EXAFS) and Raman spectroscopies. The EXAFS analysis shows that in GaN samples grown by Molecular Beam Epitaxy (MBE) at 750 °C the Ga–Ga distance is about 0.19% longer than the…

Materials Science and Engineering: B, 2011, 176 (9), pp.723-726. ⟨10.1016/j.mseb.2011.02.028⟩. ⟨hal-02906735⟩

  • Communication dans un congrès

A new method to improve the efficiency of the heat flow path of a micro thermoelectric generator

Z. Yuan, K. Ziouche, Z. Bougrioua, P. Godts, T. Lasri, D. Leclercq

9th European Conference on Thermoelectrics, ECT 2011, 2011, Thessaloniki, Greece. pp.435-438, ⟨10.1063/1.4731589⟩. ⟨hal-00800350⟩

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