Publications

Affichage de 31 à 40 sur 103


  • Communication dans un congrès

A new method to improve the efficiency of the heat flow path of a micro thermoelectric generator

Z. Yuan, K. Ziouche, Z. Bougrioua, P. Godts, T. Lasri, D. Leclercq

9th European Conference on Thermoelectrics, ECT 2011, 2011, Thessaloniki, Greece. pp.435-438, ⟨10.1063/1.4731589⟩. ⟨hal-00800350⟩

  • Article dans une revue

Simultaneous fabrication of superhydrophobic and superhydrophilic polyimide surfaces with low hysteresis

G. Scheen, K. Ziouche, Z. Bougrioua, P. Godts, D. Leclercq, T. Lasri

Langmuir, 2011, 27, pp.6490-6495. ⟨10.1021/la1050805⟩. ⟨hal-00597097⟩

  • Communication dans un congrès

New unpackaged infrared microsensors for house automation

K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, Didier Leclercq

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, unknown, Morocco. CDROM, session A4, papier 166, 1-5. ⟨hal-00591379⟩

  • Communication dans un congrès

Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells

T. Gühne, Z. Bougrioua, M. Nemoz, R. Chmielowski, Thierry Bretagnon, Bernard Gil, M. Leroux

Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed.…

PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, Jul 2008, Rio de Janeiro, Brazil. pp.191-192, ⟨10.1063/1.3295362⟩. ⟨hal-00546363⟩

  • Communication dans un congrès

Imageur infrarouge faible coût, faible résolution pour applications grand public

C. Sion, K. Ziouche, P. Godts, Z. Bougrioua, T. Lasri, D. Leclercq

Congrès de la Société Française de Thermique, SFT 2010, 2010, Inconnue, France. pp.Vol. 18, 687-690. ⟨hal-00573202⟩

  • Article dans une revue

Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua

Applied Physics Letters, 2010, 96, pp.123505-1-3. ⟨10.1063/1.3353971⟩. ⟨hal-00567879⟩

  • Communication dans un congrès

Far-infrared magnetooptical studies of the 6A1(S) ground multiplet of Fe3+ center in GaN/AlGaN high electron mobility transistors

K. Nogajewski, J. Lusakowski, K. Karpierz, M. Grynberg, Z. Bougrioua, E. Kaminska, A. Piotrowska

30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. ⟨hal-00808271⟩

  • Article dans une revue

Electrical behaviour of lateral Al/n-GaN/Al structures

Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecz

Applied Surface Science, 2010, 256, pp.5614-5617. ⟨10.1016/j.apsusc.2010.03.031⟩. ⟨hal-00568566⟩

  • Article dans une revue

Quasi-monolithic heat flux microsensor based on porous silicon boxes

K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, D. Leclercq

Sensors and Actuators A: Physical , 2010, 164, pp.35-40. ⟨10.1016/j.sna.2010.09.015⟩. ⟨hal-00549493⟩

  • Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second…

Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

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