Publications
Affichage de 41 à 50 sur 103
Carrier dynamics in Fe-doped GaN epilayers
R. Aleksiejunas, M. Azize, Z. Bougrioua, T. Malinauskas, S. Nargelas, K. Jarasiunas
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S723-S726. ⟨10.1002/pssc.200880832⟩. ⟨hal-00472681⟩
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev
Journal of Applied Physics, 2009, 105, pp.073703-1-6. ⟨10.1063/1.3100206⟩. ⟨hal-00472679⟩
Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S715-S718. ⟨10.1002/pssc.200880828⟩. ⟨hal-00472680⟩
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein
Journal of Statistical Mechanics: Theory and Experiment, 2009, 9, pp.P01046-1-10. ⟨10.1088/1742-5468/2009/01/P01046⟩. ⟨hal-00472677⟩
Al and Ti/Al contacts on n-GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩
Nouveaux microcapteurs de flux thermique en technologie silicium - Application à la détermination rapide de la température de rosée
C. Sion, P. Godts, K. Ziouche, Z. Bougrioua, T. Lasri, D. Leclercq
15ème Colloque National de la Recherche en IUT, CNRIUT'09, 2009, Villeneuve d'Ascq, France. ⟨hal-00575719⟩
Magnesium diffusion profile in GaN grown by MOVPE
Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani
Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩. ⟨hal-00356993⟩
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart
Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩. ⟨hal-00357273⟩
Nouveaux microcapteurs de flux thermique et de rayonnement infrarouge planaires à faible coût en technologie silicium pour applications domotiques
P. Godts, M. Haffar, K. Ziouche, Z. Bougrioua, D. Leclerq
6ème Colloque CAPTEURS 2008, 2008, France. pp.13-16. ⟨hal-00361035⟩
Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
Journal of Applied Physics, 2008, 103, pp.083707-1-5. ⟨10.1063/1.2903144⟩. ⟨hal-00356986⟩