Publications

• Article dans une revue

Carrier dynamics in Fe-doped GaN epilayers

R. Aleksiejunas, M. Azize, Z. Bougrioua, T. Malinauskas, S. Nargelas, K. Jarasiunas

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S723-S726. ⟨10.1002/pssc.200880832⟩. ⟨hal-00472681⟩

• Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second…

Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

• Article dans une revue

Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S715-S718. ⟨10.1002/pssc.200880828⟩. ⟨hal-00472680⟩

• Article dans une revue

Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein

Journal of Statistical Mechanics: Theory and Experiment, 2009, 9, pp.P01046-1-10. ⟨10.1088/1742-5468/2009/01/P01046⟩. ⟨hal-00472677⟩

• Article dans une revue

Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩

• Communication dans un congrès

Nouveaux microcapteurs de flux thermique en technologie silicium - Application à la détermination rapide de la température de rosée

C. Sion, P. Godts, K. Ziouche, Z. Bougrioua, T. Lasri, D. Leclercq

15ème Colloque National de la Recherche en IUT, CNRIUT'09, 2009, Villeneuve d'Ascq, France. ⟨hal-00575719⟩

• Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Mosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z. Benzarti, I. Halidou, Z. Bougrioua, B. El Jani

Physica Status Solidi A (applications and materials science), 2008, 205, pp.2042-2046. ⟨10.1002/pssa.200778869⟩. ⟨hal-00357274⟩

• Article dans une revue

Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani

Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩. ⟨hal-00356993⟩