Publications
Affichage de 51 à 60 sur 103
Nouveaux microcapteurs de flux thermique et de rayonnement infrarouge planaires à faible coût en technologie silicium pour applications domotiques
P. Godts, M. Haffar, K. Ziouche, Z. Bougrioua, D. Leclerq
6ème Colloque CAPTEURS 2008, 2008, France. pp.13-16. ⟨hal-00361035⟩
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart
Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩. ⟨hal-00357273⟩
Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
Journal of Applied Physics, 2008, 103, pp.083707-1-5. ⟨10.1063/1.2903144⟩. ⟨hal-00356986⟩
Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M -Plane Sapphire by Metalorganic Vapor Phase Epitaxy
Philippe Vennegues, Zahia Bougrioua, Tobias Guehne
Japanese Journal of Applied Physics, 2007, 46 (7A), pp.4089-4095. ⟨10.1143/JJAP.46.4089⟩. ⟨hal-02906718⟩
Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
M. Azize, Z. Bougrioua, P. Gibart
Journal of Crystal Growth, 2007, 299 (1), pp.103-108. ⟨10.1016/j.jcrysgro.2006.10.250⟩. ⟨hal-02906690⟩
Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission
Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux
Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩
Composants plasmoniques à base d'hétérojonction AlGaN/GaN pour les applications terahertz
S. Vandenbrouck, Didier Theron, Jean-Francois Lampin, L. Desplanque, Z. Bougrioua, Christophe Gaquière
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.8B3-1-4. ⟨hal-00370333⟩
Low electron mobility of field-effect transistor determined by modulated magnetoresistance
R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
Journal of Applied Physics, 2007, 102 (10), pp.103701.1. ⟨hal-00389540⟩
Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth
I. Halidou, Z. Benzarti, Z. Bougrioua, T. Boufaden, B. El Jani
Superlattices and Microstructures, 2006, 40 (4-6), pp.490-495. ⟨10.1016/j.spmi.2006.09.018⟩. ⟨hal-02906714⟩
Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates
P. Vennegues, F. Mathal, Z. Bougrioua
Physica Status Solidi C: Current Topics in Solid State Physics, 2006, 3 (6), pp.1658-1661. ⟨10.1002/pssc.200565292⟩. ⟨hal-02906705⟩