Publications

• Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• Article dans une revue

Mosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z. Benzarti, I. Halidou, Z. Bougrioua, B. El Jani

Physica Status Solidi A (applications and materials science), 2008, 205, pp.2042-2046. ⟨10.1002/pssa.200778869⟩. ⟨hal-00357274⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M -Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Philippe Vennegues, Zahia Bougrioua, Tobias Guehne

Japanese Journal of Applied Physics, 2007, 46 (7A), pp.4089-4095. ⟨10.1143/JJAP.46.4089⟩. ⟨hal-02906718⟩

• Article dans une revue

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

M. Azize, Z. Bougrioua, P. Gibart

AlGaN/GaN high-electron mobility transistors (HEMTs) structures regrown by metalorganic vapour phase epitaxy (MOVPE) on semi-insulating (SI) GaN templates, after exposure to air, results in the presence of parasitic conducting channels at regrowth interface. Air contamination of the SI GaN…

Journal of Crystal Growth, 2007, 299 (1), pp.103-108. ⟨10.1016/j.jcrysgro.2006.10.250⟩. ⟨hal-02906690⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material…

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩

• Communication dans un congrès

Composants plasmoniques à base d'hétérojonction AlGaN/GaN pour les applications terahertz

S. Vandenbrouck, Didier Theron, Jean-Francois Lampin, L. Desplanque, Z. Bougrioua, Christophe Gaquière

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.8B3-1-4. ⟨hal-00370333⟩

• Article dans une revue

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki

Journal of Applied Physics, 2007, 102 (10), pp.103701.1. ⟨hal-00389540⟩

• Article dans une revue

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

I. Halidou, Z. Benzarti, Z. Bougrioua, T. Boufaden, B. El Jani

GaN has been grown using Si/N treatment growth by MOVPE on sapphire (0001) in a home-made vertical reactor. The growth was monitored by in situ laser reflectometry. The morphological, electrical and optical properties of GaN are investigated at all the growth stages. To this aim, the growth was…

Superlattices and Microstructures, 2006, 40 (4-6), pp.490-495. ⟨10.1016/j.spmi.2006.09.018⟩. ⟨hal-02906714⟩

• Article dans une revue

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

P. Vennegues, F. Mathal, Z. Bougrioua

The microstructure of (11‐20) GaN films grown on (1‐102) sapphire substrates is studied by transmission electron microscopy. The predominant defects emerging at the surface of a 1‐2 μm thick layers are basal stacking faults of I1 type (1/6<20‐23> displacement vector). These defects are either…

Physica Status Solidi C: Current Topics in Solid State Physics, 2006, 3 (6), pp.1658-1661. ⟨10.1002/pssc.200565292⟩. ⟨hal-02906705⟩