Publications

• Article dans une revue

Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

M. Azize, M. Leroux, M. Laügt, P. Gibart, Z. Bougrioua

In order to get semi‐insulating GaN layers with a low dislocation density on sapphire, two kinds of Fe doping were explored by low pressure metalorganic vapour phase epitaxy (LP‐MOVPE): the modulation doping (MD) and the continuous doping (CD). The high crystalline quality and the semi‐insulating…

Physica Status Solidi A (applications and materials science), 2006, 203 (7), pp.1744-1748. ⟨10.1002/pssa.200565341⟩. ⟨hal-02906686⟩

• Article dans une revue

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Y. Guhel, B. Boudart, E. Delos, Marie Germain, Z. Bougrioua

Microelectronics Reliability, 2006, 46 (5-6), pp.786 - 793. ⟨10.1016/j.microrel.2005.08.008⟩. ⟨hal-01646876⟩

• Article dans une revue

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

Journal de Physique IV Proceedings, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩. ⟨hal-02906684⟩

• Article dans une revue

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Philippe Vennegues, Zahia Bougrioua

The absolute epitaxial relationships between III-nitride films and R-plane sapphire are investigated using convergent beam electron diffraction. The resulting relationships are found to be[1−100]III-N‖‖[11−20]sapphire and [0001]III-N‖‖[−1101]sapphire, respectively. The O–Al bonds in the sapphire…

Applied Physics Letters, 2006, 89, pp.111915. ⟨10.1063/1.2353810⟩. ⟨hal-02906710⟩

• Article dans une revue

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related…

MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩. ⟨hal-02906702⟩

• Article dans une revue

Anisotropy-induced polarization mixture of surface acoustic waves in Ga N ∕ c -sapphire heterostructures

J. Pedrós, F. Calle, J. Grajal, R. Jiménez Riobóo, Y. Takagaki, K. Ploog, Z. Bougrioua

The characteristics of surface acoustic waves (SAWs) in GaN layers grown on c-plane sapphire are investigated. Besides Rayleigh mode, Sezawa and Love modes, which are confined in the nitride layers, arise because of the slow sound propagation in GaN compared with the substrate. In addition, pseudo-…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (7), ⟨10.1103/PhysRevB.72.075306⟩. ⟨hal-02906694⟩

• Article dans une revue

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of…

Journal of Crystal Growth, 2005, 278 (1-4), pp.383-386. ⟨10.1016/j.jcrysgro.2005.01.037⟩. ⟨hal-02906611⟩

• Article dans une revue

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Z. Bougrioua, M. Azize, A. Jimenez, A.-F. Braña, P. Lorenzini, B. Beaumont, E. Munoz, P. Gibart

Highly resistive GaN (>1E+8 Ω#) is grown by MOVPE on sapphire with dislocation density in the range 1E+8 to 8E+8 /cm², using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm²/V/s at n_s∼7.6E+12 /cm². Good DC and RF small signal…

Physica Status Solidi C: Current Topics in Solid State Physics, 2005, 2 (7), pp.2424-2428. ⟨10.1002/pssc.200461588⟩. ⟨hal-02906540⟩

• Article dans une revue

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain

Solid-State Electronics, 2005, 49, pp.1589-1594. ⟨hal-00154914⟩

• Article dans une revue

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩