Publications

• Article dans une revue

Free carrier mobility in AlGaN/GaN quantum wells

J-L Farvacque, Z. Bougrioua, F. Carosella, I Moerman

Journal of Physics: Condensed Matter, 2002, 14 (48), pp.13319-13328. ⟨10.1088/0953-8984/14/48/384⟩. ⟨hal-02906518⟩

• Article dans une revue

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 N

E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F Sanchez, M Montojo, M. Eickhoff, Franck Omnès, Z. Bougrioua, I. Moerman

In this work we analyse the performance of Pt- and Ni-based Schottky metallizations on AlxGa1−xN (x = 0, 0.31). An intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of the Schottky barrier height. Pt/Ti/Au contacts on GaN provide a barrier…

Semiconductor Science and Technology, 2002, 17 (9), pp.L47-L54. ⟨10.1088/0268-1242/17/9/103⟩. ⟨hal-02906516⟩

• Communication dans un congrès

La filière GaN pour les applications hyperfréquences

Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Zahia Bougrioua, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau

9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France. ⟨hal-00149734⟩

• Communication dans un congrès

AlGaN/GaN HEMT for RF power applications

Jean-Claude de Jaeger, Z. Bougria, S. Cassette, E. Chartier, Y. Cordier, Gilles Dambrine, E. Delos, M.A. Poisson, S. Delage, B. Dessertenne, D. Ducatteau, M. Elkhou, D. Floriot, Christophe Gaquière, Et Al.

10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy. ⟨hal-00149736⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction…

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth of semi-insulating buffers have been identified and are described. TEM…

Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩. ⟨hal-02906506⟩

• Article dans une revue

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

J Harris, K Lee, T. Wang, S. Sakai, Z. Bougrioua, Ingrid Moerman, E Thrush, J Webb, Hao Tang, T Martin, Duncan Kennedy Maude, J-C Portal

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq,…

Semiconductor Science and Technology, 2001, 16 (5), pp.402-405. ⟨10.1088/0268-1242/16/5/321⟩. ⟨hal-02906503⟩

• Article dans une revue

Free-carrier mobility in GaN in the presence of dislocation walls

J.-L. Farvacque, Z. Bougrioua, I. Moerman

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation…

Physical Review B, 2001, 63 (11), ⟨10.1103/PhysRevB.63.115202⟩. ⟨hal-02906502⟩

• Article dans une revue

Investigation of the optical and electro-optical (EO) properties of hexagonal boron nitride thin fims deposited by PECVD technique

A. El Yadouni, A. Soltani, P. Thevenin, A. Bougrioua, A. Bath, J.C. Loulergue

Optical Materials, 2001, 17, pp.319-322. ⟨hal-00152600⟩