Publications

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Article dans une revue

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

J-L Farvacque, Z. Bougrioua, I Moerman

Journal of Physics: Condensed Matter, 2000, 12 (49), pp.10213-10221. ⟨10.1088/0953-8984/12/49/321⟩. ⟨hal-02906495⟩

• Article dans une revue

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

A Stafford, S.J.C Irvine, Z. Bougrioua, K. Jacobs, I Moerman, E.J Thrush, L Considine

Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩. ⟨hal-02906485⟩

• Article dans une revue

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

J.-L Farvacque, Z. Bougrioua, I Moerman, G. van Tendeloo, O. Lebedev

Physica B: Condensed Matter, 1999, 273-274, pp.140-143. ⟨10.1016/S0921-4526(99)00431-7⟩. ⟨hal-02906481⟩

• Article dans une revue

Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE

Zahia Bougrioua, J.-L Farvacque, Ingrid Moerman, Piet Demeester, J.J. Harris, K Lee, Gustaaf van Tendeloo, Oleg Lebedev, E. J. Thrush

physica status solidi (b), 1999. ⟨hal-02906475⟩

• Article dans une revue

Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J.J. Harris, K Lee, I. Harrison, L. B. Flannery, D. Korakakis, T. S. Cheng, C. T. Foxon, Z. Bougrioua, I. Moerman, W. van Der Stricht, E. J. Thrush, B. Hamilton, K. Ferhah

Electron transport in Si‐doped and unintentionally‐doped GaN films grown on sapphire by MOCVD and MBE has been analysed assuming that a parallel conducting channel, via an impurity band, is present. No dependence on growth method or dopant type was observed, but other trends were apparent: a) the…

Physica Status Solidi A (applications and materials science), 1999. ⟨hal-02906478⟩

• Article dans une revue

Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Michel Abou-Khalil, Toshiaki Matsui, Ke Wu, Roman Maciejko, Zahia Bougrioua

Applied Physics Letters, 1998, 73 (1), pp.70-72. ⟨10.1063/1.121726⟩. ⟨hal-02906469⟩

• Article dans une revue

Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001)

S. Guillon, R. Y.-F. Yip, P. Desjardins, M. Chicoine, Z. Bougrioua, M. Beaudoin, A. Aït-Ouali, R. Masut

Journal of Vacuum Science & Technology A, 1998, 16 (2), pp.781-785. ⟨10.1116/1.581521⟩. ⟨hal-02906468⟩

• Article dans une revue

Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)

H. Marchand, P. Desjardins, S. Guillon, J.-E. Paultre, Z. Bougrioua, R. Y.-F. Yip, R. Masut

Applied Physics Letters, 1997, 71 (4), pp.527-529. ⟨10.1063/1.119609⟩. ⟨hal-02415062⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. II. The quantum regime

Z. Bougrioua, J. Farvacque, D. Ferre

This article deals with the influence of dislocations on the conductivity of two dimensional electron gas measured at helium temperature and at high magnetic field. Two kinds of dislocation substructures have been experimentally studied: they correspond either to a family of parallel dislocation…

Journal of Applied Physics, 1996, 79 (3), pp.1546-1555. ⟨10.1063/1.360998⟩. ⟨hal-02415036⟩