Publications

• Article dans une revue

Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

F. Figueiras, E. Rauwel, V.S. Amaral, N. Vyshatko, A.L. Kholkin, Caroline Soyer, Denis Remiens, V.V. Shvartsman, P. Borisov, W. Kleemann

Journal of Vacuum Science & Technology A, 2010, 28, pp.6-10. ⟨10.1116/1.3256200⟩. ⟨hal-00549531⟩

• Article dans une revue

Propagation of elastic waves in one-dimensional periodic stubbed waveguides

Anne-Christine Hladky, C. Granger, Jerome O. Vasseur, M. de Billy

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104307-1-7. ⟨10.1103/PhysRevB.82.104307⟩. ⟨hal-00548561⟩

• Article dans une revue

Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors

E. Mairiaux, L. Desplanque, X. Wallart, M. Zaknoune

IEEE Electron Device Letters, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩. ⟨hal-00548566⟩

• Article dans une revue

Adjustable supercontinuum laser source with low coherence length and low timing jitter

Marco Andreana, Anne Bertrand, Y. Hernandez, Philippe Leproux, Vincent Couderc, Stéphane Hilaire, Guillaume Huss, D. Giannone, Alessandro Tonello, Alexis Labruyère

This paper introduces a supercontinuum (SC) laser source emitting from 400 nm to beyond 1750 nm, with adjustable pulse repetition rate (from 250 kHz to 1 MHz) and duration (from ~200 ps to ~2 ns). This device makes use of an internally-modulated 1.06 μm semiconductor laser diode as pump source. The…

Proceedeing SPIE Europe, 2010, 7714, pp. 771404. ⟨10.1117/12.854237⟩. ⟨hal-00633563⟩

• Communication dans un congrès

A FIR baseband filter for high data rate 60-GHz wireless communications

J. Muller, A. Cathelin, A. Niknejad, A. Kaiser

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1771-1774, ⟨10.1109/ISCAS.2010.5537620⟩. ⟨hal-00549959⟩

• Communication dans un congrès

Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, G. Strasser, D. Pogany, E. Gornik

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.163-166, ⟨10.1109/ASDAM.2010.5666325⟩. ⟨hal-00550008⟩

• Communication dans un congrès

High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply

A. Olivier, A. Noudeviwa, Nicolas Wichmann, Yannick Roelens, L. Desplanque, Francois Danneville, Gilles Dambrine, X. Wallart, S. Bollaert

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.162-165. ⟨hal-00549918⟩

• Communication dans un congrès

Theoretical and experimental study of the short and long range sensing using gold nanostructures

Sabine Szunerits, O. Saison, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, E. Galopin, J. Niedziolka-Jönsson, Rabah Boukherroub

SPIE Photonics Europe, Nanophotonics III, 2010, Belgium. pp.771235-1-8, ⟨10.1117/12.854855⟩. ⟨hal-00549983⟩

• Communication dans un congrès

Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs

N. Malbert, C. Sury, A. Curutchet, N. Labat, C. Dua, M. Oualli, Virginie Hoel, Y. Douvry, Jean-Claude de Jaeger, C. Bru-Chevallier, W. Chikaoui, J.M. Bluet

5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87. ⟨hal-00549998⟩

• Article dans une revue

Molecular nanoelectronics [Invited review paper]

D. Vuillaume

Proceedings of the IEEE, 2010, 98, pp.2111-2123. ⟨10.1109/JPROC.2010.2063410⟩. ⟨hal-00548967⟩