Publications

• Communication dans un congrès

Experimental determination of band offsets in PbSe/CdSe core/shell nanocrystals by ultra-violet photoelectron spectroscopy (UPS)

Justin Habinshuti, Y. Justo, T.H. Nguyen, O. Cristini, F. Bournel, J.J. Gallet, Z. Hens, S. Turrell, I. Vobornik, J. Fujii, J. Avila, B. Grandidier

The 5th SOLEIL Users' Meeting, Jan 2010, Palaiseau, France. ⟨hal-00496488⟩

• Communication dans un congrès

Ginzburg Landau description of metastable vortices : static and dynamic properties

Laurent Baudry, Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Lahoche

19th International Symposium on the Applications of Ferroelectrics, 10th European Conference on the Applications of Polar Dielectrics, ISAF-ECAPD 2010, 2010, Edinburgh, Scotland, United Kingdom. ⟨hal-00574445⟩

• Article dans une revue

Simple nanometric magnon multiplexer

Housni Al-Wahsh

We study, in the frame of the discrete dipole approximation, the magnons propagation through a simple multiplexing device made of chains of magnetic nanoparticles along which a small chains (called a resonators) is attached. We show that this simple structure can transfer with selectivity one…

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 76, pp.445-451. ⟨10.1140/epjb/e2010-00213-4⟩. ⟨hal-00549440⟩

• Communication dans un congrès

Control strategies and performance of a magnetically actuated tactile micro-actuator array

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

EuroHaptics International Conference on Generating and Perceiving Tangible Sensations, EuroHaptics 2010, 2010, France. pp.385-391, ⟨10.1007/978-3-642-14075-4_57⟩. ⟨hal-00549964⟩

• Article dans une revue

Influence of the selectively implanted collector integration on 400 GHz fmax Si/SiGe:C HBTs

Thomas Lacave, Pascal Chevalier, Yves Campidelli, Linda Depoyan, Ludovic Berthier, Frédéric André, Michel Buczko, Gregory Avenier, Christophe Gaquière, Alain Chantre

Optimization of SiGe HBT performances towards very high cut-off frequencies fT and fMAX requires high collector doping level together with low collector/base junction capacitance CBC. This compromise is usually achieved by localizing a dedicated collector implant (so-called SIC implant) under the…

ECS Transactions, 2010, 33 (6), pp.331-335. ⟨10.1149/1.3487563⟩. ⟨hal-00550006⟩

• Communication dans un congrès

[Invited] Conducting IPNs based electrochemical actuators : from polymer chemistry to biomimetic integration

F. Vidal, Cedric Plesse, Alexandre Khaldi, N. Festin, P. Pirim, Eric Cattan, D. Teyssie, C. Chevrot

Stuttgart NanoDays 2010, 2010, Stuttgart, Germany. ⟨hal-00909175⟩

• Communication dans un congrès

Génération d'ondes de choc et focalisation à courte distance dans le champ de cavitation ultrasonore à basse fréquence

Bertrand Dubus, Christian Vanhille, Cleofé Campos-Pozuelo, Christian Granger

Dans les dispositifs d'ultrasons de puissance de type sonotrode utilisés en sonochimie ou génie des procédés, le champ de cavitation est engendré par une surface cylindrique (de diamètre comparable à &_lambda; longueur d'onde acoustique dans le liquide) vibrant à basse fréquence (…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00538348⟩

• Article dans une revue

Microwave modulation of terahertz quantum cascade lasers : a transmission-line approach

Wilfried Maineult, Lu Ding, Pierre Gellie, Pascal Filloux, Carlo Sirtori, Stefano Barbieri, Tahsin Akalin, Jean-Francois Lampin, Isabelle Sagnes, Harvey E. Beere, David Ritchie

We report on microwave impedance measurements of metal-metal ridge-waveguide terahertz quantum cascade lasers. Experimental data, recorded at 4 K in the 100 MHz–55 GHz range, are well reproduced by distributed-parameter transmission-line simulations, showing that the modulation cutoff is limited by…

Applied Physics Letters, 2010, 96, pp.021108-1-3. ⟨10.1063/1.3284518⟩. ⟨hal-00548728⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩